Rchr
J-GLOBAL ID:200901013184214191   Update date: Dec. 07, 2019

Sakaue Hiroyuki

サカウエ ヒロユキ | Sakaue Hiroyuki
Affiliation and department:
Papers (130):
  • Digital Chemical Vapor Deposition of SiO2 Using a Repetitive Reaction of Triethylsilane/Hydrogen and Oxidation. Jpn. J. Appl. Phys. 1991. 30. L124-L127
  • Si Etching Employing Steady-State Magnetron Plasma with Magnet at Anode Centered in Cylindrical Reactor. Jpn. J. Appl. Phys. 1992. 31. 12B. 4338-4342
  • Aluminum-Selective Chemical Vapor Deposition Induced by Hydrogen Desorption on Silicon. Jpn. J. Appl. Phys. 1996. 35. 2B. 1010-1013
  • Excimer Laser Induced Pattern Projection Etching of Aluminum. Symp. on Dry Process. 1988
  • Digital Etching of Silicon. 1990 3rd Micro Process Conf. 1990
more...
Education (2):
  • 1983 - 1987 Hiroshima University Faculty of Engineering
  • 1987 - 1989 Hiroshima University Graduate School of Engineering
Work history (2):
  • 1989/10/01 - 2001/03/31 Hiroshima University Research Associate
  • 2001/04/01 - Hiroshima University Assistant Professor
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