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J-GLOBAL ID：200901037042718989   Update date: Apr. 17, 2024

Kumagai Yoshinao

クマガイ ヨシナオ | Kumagai Yoshinao
Affiliation and department：
Tokyo University of Agriculture and Technology Institute of Engineering, Division of Applied Chemistry

About Tokyo University of Agriculture and Technology Institute of Engineering, Division of Applied Chemistry


Job title： Professor
Homepage URL  (1)： http://www.tuat.ac.jp/~kumagai/
Research field  (1)： Crystal engineering
Research keywords  (1)： Crystal growth, Growth from vapor phase, Epitaxy, Nitride semiconductors, Oxide semiconductors
Research theme for competitive and other funds  (30)：
  • 2022 - 2025 Growth of low dislocation density indium oxide single crystal layer to elucidate intrinsic electron mobility
  • 2016 - 2021 化学平衡・非平衡制御による特異構造のボトムアップ創製
  • 2015 - 2018 バルク窒化アルミニウム結晶の点欠陥形成メカニズム解明によるn形導電性結晶の創出
  • 2017 - 2018 将来のパワーエレクトロニクスを支える基盤研究開発 酸化ガリウムパワーデバイス基盤技術の研究開発
  • 2016 - 2017 六方晶窒化ホウ素剥離層を利用したHVPE成長窒化アルミニウムの共同研究
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Papers (232)：
  • Tomoka Nishikawa, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama. Observation of nanopipes in edge-defined film-fed grown β-Ga2O3 substrate and their effect on homoepitaxial surface hillocks. Japanese Journal of Applied Physics. 2023
  • Rie Togashi, Ken Goto, Masataka Higashiwaki, Yoshinao Kumagai. Thermodynamic analysis of molecular beam epitaxy of group-III sesquioxides. JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. 5
  • Toshiyuki Iwamoto, Verdad Canila Agulto, Shuang Liu, Youwei Wang, Valynn Katrine Mag-usara, Takashi Fujii, Ken Goto, Yoshinao Kumagai, Makoto Nakajima. Characterization of electrical properties of β-Ga2O3 epilayer and bulk GaAs using terahertz time-domain ellipsometry. Japanese Journal of Applied Physics. 2023. 62. SF
  • Yoshinao Kumagai, Ken Goto, Toru Nagashima, Reo Yamamoto, Michał Boćkowski, Junji Kotani. Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy. Applied Physics Express. 2022. 15. 11. 115501-115501
  • Rie Togashi, Haruka Ishida, Ken Goto, Masataka Higashiwaki, Yoshinao Kumagai. Thermodynamic analysis of β-Ga2O3 growth by molecular beam epitaxy. Japanese Journal of Applied Physics. 2022
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MISC (373)：
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Patents (126)：
  • 半導体基板、並びにエピタキシャルウエハ及びその製造方法
  • 半導体基板、並びにエピタキシャルウエハ及びその製造方法
  • 半導体基板、並びにエピタキシャルウエハ及びその製造方法
  • 半導体基板、並びにエピタキシャルウエハ及びその製造方法
  • 半導体基板、並びにエピタキシャルウエハ及びその製造方法
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Books (9)：
  • ポストシリコン半導体 -ナノ成膜ダイナミクスと基板・界面効果-
    株式会社エヌ・ティー・エス 2013
  • 2013化合物半導体技術大全
    電子ジャーナル 2013
  • サイエンス&テクノロジー
    サイエンス&テクノロジー 2012
  • Springer Handbook of Crystal Growth
    Springer 2010
  • Springer Series in Materials Science 133, Technology of Gallium Nitride Crystal Growth
    Springer 2010
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Lectures and oral presentations  (694)：
  • Nondestructive Characterization of Carrier Density and Mobility in β-Ga2O3 Using Terahertz Waves
    (第82回応用物理学会秋季学術講演会 2021)
  • MOVPE法を用いたβ-Ga2O3成長の熱力学解析とその実験的検証
    (第82回応用物理学会秋季学術講演会 2021)
  • 多光子励起フォトルミネッセンス法によるβ-Ga2O3結晶の三次元イメージング
    (第82回応用物理学会秋季学術講演会 2021)
  • Investigation of OMVPE growth for beta gallium oxide by thermodynamic and experimental studies
    (22nd American Conference on Crystal Growth and Epitaxy (ACCGE-22) and 20th US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-20) 2021)
  • Terahertz time-domain spectroscopy of wide-bandgap semiconductors GaN and β-Ga2O3
    (The 12th International Conference on Information Optics and Photonics (CIOP 2021) 2021)
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Works (2)：
  • 酸化亜鉛系化合物半導体用の結晶成長装置開発および結晶成長技術に関わる研究
    2009 - 2010
  • 酸化亜鉛系化合物半導体用の結晶成長装置開発および結晶成長技術に関わる研究
    2008 - 2009
Education (2)：
  • 1991 - 1996 University of Tsukuba Graduate School, Division of Engineering Institute of Materials Science
  • 1987 - 1991 University of Tsukuba Third Cluster of College Institute of Materials Science
Professional career (1)：
  • Doctor (Engineering) (University of Tsukuba)
Work history (5)：
  • 2013/12/01 - Tokyo University of Agriculture and Technology Department of Applied Chemistry, Graduate School of Engineering Professor
  • 2004/04/01 - 2013/11/30 Tokyo University of Agriculture and Technology Department of Applied Chemistry, Graduate School of Engineering Associate Professor
  • 2001/08/01 - 2004/03/31 Tokyo University of Agriculture and Technology Department of Applied Chemistry, Faculty of Technology Lecturer
  • 1999/04/01 - 2001/07/31 Tokyo University of Agriculture and Technology Department of Applied Chemistry, Faculty of Technology Assistant Professor
  • 1996/04/01 - 1999/03/31 Texas Instruments, Tsukuba Research & Development Center Ltd. Advance Materials & Processes Laboratory Researcher
Committee career (11)：
  • 2014/04 - 2020/03 応用物理学会 結晶工学分科会 幹事
  • 2013/04 - 2019/03 日本結晶成長学会 評議員
  • 2016/11/04 - 2018/03/31 International Workshop on UV Materials and Devices 2017 (IWUMD-2017), November 15-18, 2017, Kyushu University, Fukuoka, Japan プログラム委員
  • 2016/11/04 - 2018/03/31 International Workshop on UV Materials and Devices 2017 (IWUMD-2017), November 15-18, 2017, Kyushu University, Fukuoka, Japan Program Committee
  • 2016/05 - 2017/04 The 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA ’17), April 19-21, 2017, Pacifico Yokohama, Yokohama, Japan Executive Committee Chair
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Awards (3)：
  • 2014/09/17 - 応用物理学会 第36回応用物理学会論文賞(応用物理学会優秀論文賞) Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy
  • 2013/11/06 - 日本結晶成長学会 第20回日本結晶成長学会技術賞 HVPE法による窒化アルミニウム単結晶基板の開発
  • 2013/09/16 - 応用物理学会 第35回応用物理学会論文賞(応用物理学会優秀論文賞) Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport
Association Membership(s) (2)：
Japanese Association for Crystal Growth Cooperation ,  The Japan Society of Applied Physics
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