Kubo Toshiharu

クボトシハル | Kubo Toshiharu

Affiliation and department：
Job title： Associate Professor
Homepage URL (1)： http://www.geocities.jp/egawa_lab/

Research field (3)： Electronic devices and equipment , Electric/electronic material engineering , Applied materials

Research keywords (1)： electronic device

Research theme for competitive and other funds (10)：

2010 - 現在 Electronic states at insulator/GaN interface
2019 - 2022 Fabrication of high-performance and low-power-consumption graphene FETs using substrates with ultra-fine metal patterns
2020 - 2021 Si基板上GaNパワーデバイスの性能を向上させるゲート構造用絶縁膜の開発
2019 - 2020 極微細金属パターン付き基板を用いた高性能グラフェン FET の作製
2017 - 2020 低炭素社会を実現する次世代パワーエレクトロニクスプロジェクト/GaNパワーデバイス等の実用化加速技術開発

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Papers (29)：

Akira Mase, Pradip Dalapati, Ryosuke Hayafuji, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa. Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2023. 38. 9
Toshiharu Kubo, Akira Takahashi, Makoto Miyoshi, Takashi Egawa. Improved field-effect mobility in transfer-free graphene films synthesized via the metal agglomeration technique using high-crystallinity Ni catalyst films. Applied Physics Express. 2021. 14. 11. 116503
PradipDalapati, KosukeYamamoto, ToshiharuKubo, TakashiEgawa, MakotoMiyoshi. Bias-controlled photocurrent generation process in GaN-based ultraviolet p-i-n photodetectors fabricated with a thick Al2O3 passivation layer. Optik. 2021. 245. 167691
Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi. High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator. Journal of Vacuum Science & Technology B. 2019. 37. 4. 041205-1-041205-4
Toshiharu Kubo, Takashi Egawa. Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 fabricated by atomic layer deposition. Physica B. 2019. 571. 210-212

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MISC (73)：

久保俊晴. 触媒金属凝集を利用した転写フリーグラフェンFETの作製. 新東技報. 2024. 42
久保俊晴, 三木隆太郎, 江川孝志. Fabrication and device characteristics estimation of AlGaN/GaN CAVETs on Si substrates with strained layer superlattice as current blocking layer and δ-doped conductive buffer layer. 電子情報通信学会技術研究報告(Web). 2024. 124. 278(ED2024 20-38)
三木隆太郎, 久保俊晴, 江川孝志. Estimation of electrical properties of AlGaN/GaN HEMTs on Si substrates with strained layer superlattice and graded AlGaN layer as the transition layer. 電子情報通信学会技術研究報告(Web). 2024. 124. 278(ED2024 20-38)
加藤一朗, 久保俊晴, 三好実人, 江川孝志. Fabrication of transfer-free graphene with fine width on sapphire substrates utilizing the agglomeration phenomenon of the thick Ni pattern. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2024. 71st
久保俊晴, 小池貴也, 神谷俊輝, 江川孝志. AlGaN/GaN vertical devices on Si substrates with highly resistive strained layer superlattice as the current blocking layer. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2024. 71st

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Patents (2)：

Lectures and oral presentations (90)：

Si基板上GaN縦型デバイスにおける温度特性評価
(電子情報通信学会11月研究会 2025)
Fabrication of transfer-free graphene FETs utilizing the catalyst metal agglomeration technique with fine Ni patterns
(JSAP-KPS Joint Symposium 2025)
厚いNiパターンに沿った凝集現象を用いて形成されたサファイア基板上転写フリーグラフェンの電気特性
(第86回応用物理学会秋季学術講演会 2025)
ALDにより成膜したSiO2/Al2O3 2層絶縁膜を用いたノーマリーオフ型AlGaN/GaN MIS-HEMTの電気特性評価
(電子情報通信学会11月研究会 2021)
ALDにより成膜したSiO2/Al2O3 2層絶縁膜を用いたノーマリーオフ型AlGaN/GaN MIS-HEMTの電気特性
(第82回応用物理学会秋季学術講演会 2021)

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Education (2)：

1999 - 2005 Keio University Graduate School, Division of Science and Engineering School of Fundamental Science and Technology
1995 - 1999 Keio University Faculty of Science and Engineering Department of applied physics and physico-informatics

Professional career (2)：

Work history (4)：

2018/04/01 - 現在 Nagoya Institute of Technology Graduate School of Engineering Shikumi College Associate Professor
2010/04/01 - 2018/03/31 Nagoya Institute of Technology Assistant Professor
2008/12/15 - 2010/03/31 Hokkaido University Research Center for Integrated Quantum Electronics Part-time researcher for university or other academic organization
2005/10/15 - 2008/12/14 The University of Tokyo School of Engineering Part-time researcher for university or other academic organization

Committee career (5)：

Awards (1)：

2017/03/05 - ISPlasma2017/IC-PLANTS2017 Committee ISPlasma2017/IC-PLANTS2017 Best Presentation Award

Association Membership(s) (2)：

電子情報通信学会電子デバイス研究会 , 日本応用物理学会

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