J-GLOBAL ID:200901037517336334   Update date: Jun. 03, 2020

Kubo Toshiharu

クボ トシハル | Kubo Toshiharu
Affiliation and department:
Job title: Associate Professor
Homepage URL  (1): http://www.geocities.jp/egawa_lab/
Research field  (3): Electronic devices and equipment ,  Electric/electronic material engineering ,  Applied materials
Research keywords  (1): electronic device
Research theme for competitive and other funds  (4):
  • 2010 - 現在 Electronic states at insulator/GaN interface
  • 2008 - 2010 Surface properties of AlGaN layers with high Al compositions
  • 2005 - 2008 Improvement of carbon compounds by fast neutron irradiation
  • 1998 - 2005 Study on the electrical conductivity of Graphite
Papers (20):
  • Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi. High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator. Journal of Vacuum Science & Technology B. 2019. 37. 041205-1-041205-4
  • Toshiharu Kubo, Takashi Egawa. Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 fabricated by atomic layer deposition. Physica B. 2019. 571. 210-212
  • Debaleen Biswas, Naoki Torii, Hirotaka Fujita, Takahiro Yoshida, Toshiharu Kubo, Takashi Egawa. Trap state characterization of Al2O3/AlInGaN/GaN metal-insulator-semiconductor heterostructures. Semiconductor Science and Technology. 2019. 34. 055014-1-055014-6
  • Noriyuki Taoka, Toshiharu Kubo, Toshikazu Yamada, Takashi Egawa, Mitsuaki Shimizu. Experimental evidence of the existence of multiple charged states at Al2O3/GaN interfaces. Semiconductor science and Technology. 2019. 34. 025009-1-025009-7
  • N. Taoka, T. Kubo, T. Yamada, T. Egawa, M. Shimizu. Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties. Jpn. J. Appl. Phys. 2017. 57. 01AD04-1-01AD04-5
Lectures and oral presentations  (34):
  • Estimation of post-deposition annealing effects on electrical properties of ALD-SiO2/AlGaN/GaN MIS-HEMTs
    (SSDM2019 2019)
  • Effects of forming gas annealing depending on gate electrode materials in ALD-Al2O3/AlGaN MIS-HEMT
    (TWHM2019 2019)
  • Reduction in ohmic contact resistance for AlGaN-channel HFETs with a quaternary AlGaInN barrier layer
    (TWHM2019 2019)
  • Device characteristics and MIS interface evaluation of Al2O3/AlGaInN/AlGaN MISHFET
    (CSW2019 2019)
  • Fabrication of Transfer-free Graphene FETs with ALD-Al2O3 Layers as the Gate Insulator
    (ISPlasma2019 2019)
Education (2):
  • 1999 - 2005 Keio University Graduate School, Division of Science and Engineering School of Fundamental Science and Technology
  • 1995 - 1999 Keio University Faculty of Science and Engineering Department of applied physics and physico-informatics
Professional career (1):
  • Doctor(Engineering) (Keio University)
Work history (4):
  • 2018/04/01 - 現在 Nagoya Institute of Technology Associate Professor
  • 2010/04/01 - 2018/03/31 Nagoya Institute of Technology Assistant Professor
  • 2008/12/15 - 2010/03/31 Hokkaido University
  • 2005/10/15 - 2008/12/14 The University of Tokyo
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