Rchr
J-GLOBAL ID:200901037614457910
Update date: Jul. 29, 2008
Hayashi Yukihiro
ハヤシ ユキヒロ | Hayashi Yukihiro
Affiliation and department:
Job title:
Chief Researcher
Research field (1):
Electronic devices and equipment
Research keywords (8):
信頼性
, 環境試験
, はんだ
, 電子機器
, Reliability
, Emvironment test
, Solder
, Electronic equipment
Research theme for competitive and other funds (2):
- 鉛フリーはんだの接続信頼性
- Connection reliability of Pb-free solder
MISC (10):
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Y. Hayashi, A. Sakai, H. Ikeda, S. Zaima and Y. Yasuda, Surface and Interface Smoothing of Epitaxial CoSi2 Films by Solid-Phase Epitaxy Using Adsorbed Oxygen Layers and Two-Step Growth on Si(001) Surfaces. Japanese Journal of Applied Physics. 2003. Vol. 42 pp. 7039-7044
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Y. Hayashi, T. Katoh, H. Ikeda, A. Sakai, S. Zaima and Y. Yasuda Application of a two-step Growth to the formation of epitaxial CoSi2 films on Si(001) surfaces:Comparative study using Reactive deposition epitaxy. Japanese Journal of Applied Physics. 2001. Vol. 40 269-275
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Y. Hayashi, T. Katoh, H. Ikeda, A. Sakai, S. Zaima and Y. Yasuda Application of a two-step Growth to the formation of epitaxial CoSi2 films on Si(001) surfaces:Comparative study using Reactive deposition epitaxy. Japanese Journal of Applied Physics. 2001. Vol. 40 269-275
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Y. Hayashi, Y. Matsuoka, T. Katoh, H. Ikegami, H. Ikeda, S. Zaima and Y. Yasuda, A new growth method of epitaxial cobalt disilicide on Si(100),. Advanced Metalization and Interconnect Systems for ULSI Applications in 1997 (Materials Research Society, Warrendale, PA, 1998) pp.663-668
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Y. Hayashi, Y. Matsuoka, H. Ikeda, S. Zaima and Y. Yasuda, Effects of initial surface states on formation processes of epitaxial CoSi2(100) on Si(100). Thin Solid Films 343-344 (1999) 562-566
more...
Professional career (2):
- Master's degree
- 博士(工学) (名古屋大学)
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