Rchr
J-GLOBAL ID:200901042799141020
Update date: Jun. 26, 2007
Saji Manabu
サジ マナブ | Saji Manabu
Affiliation and department:
Former Institution /Organization AICHI UNIVERSITY OF TECHNOLOGY FACULTY OF ENGINEERING
About Former Institution /Organization AICHI UNIVERSITY OF TECHNOLOGY FACULTY OF ENGINEERING
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Job title:
Others
Research field (1):
Electric/electronic material engineering
Research keywords (2):
電子材料
, Electronic Materials
Research theme for competitive and other funds (4):
SiC-金属界面の化学反応と電気的特性
ゾル-ゲル法による高誘電体薄膜
Chemical Reactions and Electronic Properties of SiC-metal interface
High dielectric thin films by Sol-Gel methodes
MISC (10):
Electrical Properties and Interface Chemistry in Ti/3C-SiC Systems. IEEE. Trans. Electron Devices. 1999. 46. 3. 444-448
Transport properties in GaRlium doped CdTe MOVPE layers. J. Cryst. Growth. 1997. 172. 1/2. 83-88
Electronic properties in Ga-doped CdTe layers grown by metalorganic vaporphase Epitoxy. J. Appl. Phys. 1992. 72. 8. 3406-3409
Mechanism of arsenic incorporation in MOVPE growth of CdTe Layers. J. Cryst. Growth. 1992. 117. 1/4. 254-258
X-ray Photo-electron Spectroscopy and Auger Electron Spectroscopy Analyses of the initial Growth Mechanism of CdTe Layers on(100)GaAs by Metalorganic Vapor phase Epitoxy. J. Appl. Phys. 1990. 67. 11. 6865-6870
more...
Books (2):
インターユニバーシティ 電気回路A 改訂2版
オーム(]G2487[) 2003
Electrical Circuit A
1996
Education (4):
- 1967 大阪大学大学院 電気工学
- 1967 Osaka University Electrical Engineering
- 1960 Osaka University
- 1960 Osaka University
Professional career (2):
(BLANK)
(BLANK)
Committee career (2):
1994 - 1996 応用物理学会 理事
1985 - 1987 電気学会 本部評議員
Association Membership(s) (4):
レーザー学会
, 日本物理学会
, 電気学会
, 応用物理学会
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