Rchr
J-GLOBAL ID：200901048573459408
Update date: Jan. 30, 2024
Kinoshita Kyoichi
キノシタ キョウイチ | Kinoshita Kyoichi
Affiliation and department：
Research field (2)：
Crystal engineering
, Applied materials
Research keywords (5)：
微小重力環境利用
, 混晶
, 半導体
, 成長メカニズム
, 結晶成長
Research theme for competitive and other funds (4)：
- 2010 - 2012 Crystal orientation dependence of solution growth in InGaSb and InGaAs
- 2009 - 2011 極限CMOSの研究開発
- 2003 - 2004 Homogeneous growth of SiGe bulk crystals by using the traveling liquidus-zone method
- 1997 - 半導体結晶成長メカニズムの研究
Papers (2)：
-
Satoshi Baba, Yoshiaki Nakamura, Masahiro Mikami, Eita Shoji, Masaki Kubo, Takao Tsukada, Kyoichi Kinoshita, Yasutomo Arai, Yuko Inatomi. Numerical investigation of growth interface shape and compositional distributions in SiGe crystals grown by the TLZ method in the International Space Station. Journal of Crystal Growth. 2021
-
Tatsuro Maeda, Hiroyuki Hattori, Wen Hsin Chang, Yasutomo Arai, Kyoichi Kinoshita. Hole Hall mobility of SiGe alloys grown by the traveling liquidus-zone method. Applied Physics Letters. 2015. 107. 15. 152104-152104
Professional career (1)：
Awards (2)：
- 2018/10 - 日本マイクログラビティ応用学会 論文賞
- 2010/08 - 日本結晶成長学会 第27回論文賞
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