Rchr

J-GLOBAL ID：200901049970368067 Update date: Jul. 04, 2022

Hashizume Nobuo

ハシヅメノブオ | Hashizume Nobuo

Affiliation and department：

Research field (1)： Electronic devices and equipment

Research keywords (2)：オプトエレクトロニクス , Optoelectornics

Research theme for competitive and other funds (4)：

2000 - 2008 オプトエレクトロニクスデバイスに関する研究
2000 - 2008 Study on optoelectronics devices
プラスティック光ファイバーに関する研究
Research on Plastic Optical Fiber

MISC (10)：

Y Zhu, JK Twynam, M Yagura, M Hasegawa, T Hasegawa, Y Eguchi, A Yamada, E Suematsu, K Sakuno, H Sato, et al. Analytical model for electrical and thermal transients of self-heating semiconductor devices. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 1998. 46. 12. 2258-2263
K TOMIZAWA, N HASHIZUME. ENSEMBLE MONTE-CARLO SIMULATION OF AN ALGAAS GAAS HETEROSTRUCTURE MIS-LIKE FET. IEEE TRANSACTIONS ON ELECTRON DEVICES. 1988. 35. 7. 849-856
K TOMIZAWA, Y AWANO, N HASHIZUME, M KAWASHIMA. SIMULATION OF NEAR BALLISTIC ELECTRON-TRANSPORT IN A SUB-MICRON GAAS DIODE WITH ALX GA1-X AS/GAAS HETEROJUNCTION CATHODE. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION. 1985. 132. 1. 37-41
粟野祐二. GaAs Ballistic FETの電気的諸特性. 応用物理. 1984. 53. 5. 445-452
Y AWANO, K TOMIZAWA, N HASHIZUME. PRINCIPLES OF OPERATION OF SHORT-CHANNEL GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTOR DETERMINED BY MONTE-CARLO METHOD. IEEE TRANSACTIONS ON ELECTRON DEVICES. 1984. 31. 4. 448-452

ｍore...

Education (2)：

- 1963 The University of Tokyo The Faculty of Engineering Department of Electrial Engineering
- 1963 The University of Tokyo Faculty of Engineering

Professional career (1)：

(BLANK)

Work history (3)：

2000 - 2002 Hiroshima Institute of Technology
2000 - 2002 Professor, Dept of Electronics and Plutonic
Systems Engineering

Committee career (1)：

1995 - 1997 応用物理学会評議員

Association Membership(s) (2)：

電子情報通信学会 , 応用物理学会

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