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J-GLOBAL ID：200901050248837794   Update date: Apr. 19, 2024

Yamada Yoichi

ヤマダ ヨウイチ | Yamada Yoichi
Affiliation and department：
Yamaguchi University Quantum Devices and Materials Engineering Graduate School of Science and Engineering Materials Science and Engineering(Engineering) Graduate School of Science and Engineering(Engineering) YAMAGUCHI UNIVERSITY

About Yamaguchi University Quantum Devices and Materials Engineering Graduate School of Science and Engineering Materials Science and Engineering(Engineering) Graduate School of Science and Engineering(Engineering) YAMAGUCHI UNIVERSITY


Job title： Professor
Research field  (2)： Electric/electronic material engineering ,  Semiconductors, optical and atomic physics
Research keywords  (5)： Optical properties ,  Excitonics ,  Low-dimensional quantum structures ,  Wide bandgap semiconductor ,  Laser spectroscopy
Research theme for competitive and other funds  (13)：
  • 2022 - 2025 窒化物半導体AlGaNの非極性面成長と深紫外LED応用
  • 2016 - 2021 Optical properties and functionalities of dense excitonic systems in singularity structures
  • 2016 - 2019 Elucidation of fundamental optical properties of biexcitons in deep ultraviolet ternary alloy quantum wells and application to laser operation
  • 2013 - 2016 Fabrication of semipolar {20-2-1} plane GaN substrate grown from the sidewall of patterned sapphire substrate
  • 2013 - 2016 Optical functionality of dense excitonic systems in nitride-based deep-ultraviolet ternary alloy semiconductors
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Papers (184)：
  • Hideaki Murotani, Kunio Himeno, Hayate Ohkawara, Kaichi Tani, Satoshi Kurai, Narihito Okada, Noritoshi Maeda, Muhammad Ajmal Khan, Hideki Hirayama, Yoichi Yamada. Photoluminescence Excitation Spectroscopy of Stimulated Emission from AlGaN-Based Multiple Quantum Wells with an Emission Wavelength Around 280 nm. physica status solidi (b). 2024
  • Hideaki Murotani, Kosuke Inai, Kunio Himeno, Kaichi Tani, Hiromasa Hayashi, Satoshi Kurai, Narihito Okada, Kenjiro Uesugi, Hideto Miyake, Yoichi Yamada. Temperature- and Excitation Power Density-Resolved Photoluminescence of AlGaN-Based Multiple Quantum Wells Emitting in the Spectral Range of 220-260 nm. physica status solidi (b). 2024
  • Minagi Miyamoto, Wataru Matsumura, Ryo Okuno, Syunsuke Matsuda, Koki Hanasaku, Taketo Kowaki, Daisuke Inahara, Satoshi Kurai, Narihito Okada, Yoichi Yamada. Improvement of electrical properties by insertion of AlGaN interlayer for N-polar AlGaN/AlN structures on sapphire substrates. Japanese Journal of Applied Physics. 2023. 62. SN. SN1016-SN1016
  • Taketo Kowaki, Wataru Matsumura, Koki Hanasaku, Ryo Okuno, Daisuke Inahara, Shunsuke Matsuda, Satoshi Kurai, Yongzhao Yao, Yukari Ishikawa, Narihito Okada, et al. Si Doping Effects in AlGaN Channel Layer on Performance of N-polar AlGaN/AlN FETs. physica status solidi (a). 2023
  • Daisuke Inahara, Shunsuke Matsuda, Wataru Matsumura, Ryo Okuno, Koki Hanasaku, Taketo Kowaki, Minagi Miyamoto, Yongzhao Yao, Yukari Ishikawa, Atsushi Tanaka, et al. Investigation of Electrical Properties of N-Polar AlGaN/AlN Heterostructure Field Effect Transistors. physica status solidi (a). 2023
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MISC (103)：
  • 山田陽一. AlGaN系量子井戸構造における励起子利得. 日本学術振興会光電相互変換第125委員会第262回研究会資料. 2022
  • MUROTANI Hideaki, YAMADA Yoichi, HIRAYAMA Hideki. Excitonic optical properties of deep-UV luminescent AlGaN. Oyo Buturi. 2022. 91. 7. 416-420
  • 中生拓希, 姫野邦夫, 武田椋平, 室谷英彰, 倉井聡, 岡田成仁, KHAN M. Ajmal, 前田哲利, 定昌史, 平山秀樹, et al. Analysis of luminescence efficiency curve at high excitation condition in deep UV AlGaN quantum well structure. 応用物理・物理系学会中国四国支部合同学術講演会講演予稿集. 2021. 2021
  • 押村遼太, 稲井滉介, 草場崇史, 藤井厚志, 倉井聡, 岡田成仁, 室谷英彰, 上杉謙次郎, 三宅秀人, 山田陽一. Internal quantum efficiency of AlGaN quantum wells on various AlN templates. 応用物理・物理系学会中国四国支部合同学術講演会講演予稿集. 2021. 2021
  • 中津留圭悟, 南里翼, 倉井聡, 岡田成仁, 只友一行, 室谷英彰, 矢野良樹, 小関修一, 松本功, 山田陽一. Excitation wavelength dependence of internal quantum efficiency in green InGaN-based quantum well structures. 応用物理・物理系学会中国四国支部合同学術講演会講演予稿集. 2021. 2021
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Patents (1)：
  • 半導体発光素子の内部量子効率を測定する装置及びその方法
Books (6)：
  • 半導体工学(第3版)
    森北出版株式会社 2013
  • 白色LED照明技術のすべて
    株式会社 工業調査会 2009
  • Wide Bandgap Semiconductors - Fundamental Properties and Modern Photonic and Electronic Devices
    Springer-Verlag GmbH 2007 ISBN:3540472347
  • ワイドギャップ半導体光・電子デバイス
    森北出版株式会社 2006 ISBN:4627773218
  • 白色LED照明システム技術の応用と将来展望
    株式会社 シーエムシー出版 2003 ISBN:4882314037
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Lectures and oral presentations  (680)：
  • Photoluminescence excitation spectroscopy of stimulated emission from AlGaN-based UV-C multiple quantum wells
    (14th International Conference on Nitride Semiconductors (ICNS14) 2023)
  • Temperature dependence of efficiency curves in AlGaN-based MQWs with emission wavelengths from 220 to 260 nm
    (14th International Conference on Nitride Semiconductors (ICNS14) 2023)
  • Well-Number-Dependence of Internal Quantum Efficiency in AlGaN Quantum Wells on Low-Dislocation Sputtered AlN Templates
    (14th International Conference on Nitride Semiconductors (ICNS14) 2023)
  • Relationship between Internal Quantum Efficiency and Point Defects in AlGaN Quantum Wells on Low-Dislocation Sputtered AlN Templates
    (14th International Conference on Nitride Semiconductors (ICNS14) 2023)
  • Vapor Phase Mass Transport of InGaN by Gap Face-to-Face Annealing with Ammonia
    (14th International Conference on Nitride Semiconductors (ICNS14) 2023)
ｍore...
Education (3)：
  • 1990 - 1993 University of Tsukuba Graduate School of Physics Department of Physics
  • 1988 - 1990 Osaka University Graduate School of Engineering Department of Electrical Engineering
  • 1984 - 1988 Osaka University Faculty of Engineering Department of Electrical Engineering
Professional career (2)：
  • Doctor (Science)
  • Master of Engineering
Work history (14)：
  • 2022/04 - 現在 山口大学 大学院創成科学研究科長
  • 2022/04 - 現在 山口大学 工学部長
  • 2016/04 - 現在 Yamaguchi University Graduate School of Sciences and Technology for Innovation Professor
  • 2018/04 - 2020/03 山口大学工学部附属工学教育研究センター センター長
  • 2018/04 - 2020/03 山口大学教育研究評議会 評議員
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Committee career (22)：
  • 2022/02 - 現在 応用物理学会 代議員
  • 2021/04 - 現在 ワイドギャップ半導体学会 学界委員
  • 2019 - 現在 14th International Conference on Nitride Semiconductors (ICNS14) Publication Committee
  • 2012/04 - 現在 応用物理学会中国四国支部 幹事
  • 2009/04 - 2024/03 日本学術振興会 光電相互変換第125委員会 委員
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Awards (3)：
  • 2014/06 - 宇部興産学術振興財団 第54回学術奨励賞
  • 1999/08 - ICL'99 Young Researcher Award
  • 1993/05 - 社団法人 電気学会 第49回電気学術振興賞論文賞
Association Membership(s) (2)：
The Japan Society of Applied Physics ,  The Physical Society of Japan
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