Rchr
J-GLOBAL ID：200901051263657863
Update date: Jan. 30, 2024
Sueoka Koji
スエオカ コウジ | Sueoka Koji
Affiliation and department：
Job title：
Professor
Homepage URL (1)：
http://www-apl.c.oka-pu.ac.jp/
Research field (2)：
Crystal engineering
, Applied materials
Research keywords (7)：
半導体シリコン単結晶
, 第一原理計算
, 結晶成長
, 格子欠陥
, 新材料探索
, 半導体物性
, Semiconductor Molecular Simulation Silicon
Research theme for competitive and other funds (5)：
- 2019 - 2022 Development of calculation technique for defect control in semiconductors for power device application
- 2016 - 2019 Development of calculation method for physical properties based on the possible atomic configurations and its application to the IV group semiconductor materials
- 2013 - 2016 Basic research for precise control of intrinsic point defects in 450 mm diameter silicon crystal growth
- 2003 - 次世代半導体基板の開発に関する基礎研究
- Research and development of ULSI substrates in next generation
Papers (138)：
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Yuji Mukaiyama, Yuki Fukui, Toshinori Taishi, Yusuke Noda, Koji Sueoka. Evaluation of numerical simulation of constitutional supercooling during heavily Boron-Doped silicon crystal growth using Cz method. Journal of Crystal Growth. 2023. 619
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Akira Sada, Yusuke Noda, Koji Sueoka, Kaoru Kajiwara, Masataka Hourai. First principles analysis on void-reduction mechanism and impact of oxygen in nitrogen-doped CZ-Si crystal. Journal of Crystal Growth. 2023. 610
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Takuto Ushiro, Tatsuya Yokoi, Yusuke Noda, Eiji Kamiyama, Masato Ohbitsu, Hiroki Nagakura, Koji Sueoka, Katsuyuki Matsunaga. Preferential Growth Mode of Large-Sized Vacancy Clusters in Silicon: A Neural-Network Potential and First-Principles Study. The Journal of Physical Chemistry C. 2021. 125. 48. 26869-26882
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Eiji Kamiyama, Tatsuya Yokoi, Yusuke Noda, Koji Sueoka. Differential clustering of self-interstitials during Si crystal growth. Journal of Crystal Growth. 2021. 574. 126313-126313
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Eiji Kamiyama, Koji Sueoka. Prediction of O Aggregation in Straight Line at High Temperature in Si Crystals: Thermal Donors Attaching to an Oxide Precipitate Surface. ECS Journal of Solid State Science and Technology. 2020. 9. 5. 054003-054003
ｍore...
MISC (22)：
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野田祐輔, 末岡浩治. Theoretical Studies on Point Defects and Impurities in Semiconductor Crystal Structures by First-Principles Calculations. 日本結晶成長学会誌(CD-ROM). 2023. 49. 4
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佐田晃, 野田祐輔, 末岡浩治, 梶原薫, 宝来正隆. Impact of Interstitial Oxygen on Void Reduction Effect of Nitrogen in Czochralski Silicon Single Crystals. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2023. 70th
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野田祐輔, 桑原理一, 佐原亮二, 末岡浩治, 大野かおる. First-Principles Phase-Field Simulations on Aggregation of Intrinsic Point Defects in Si Single Crystals. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2023. 70th
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山中一希, 横井達矢, 神山栄治, 野田祐輔, 末岡浩治. ANN potential analysis on clustering of self-interstitial atoms in Si crystal. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2023. 70th
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佐藤正義, 大櫃万聖, 後口拓登, 野田祐輔, 末岡浩治. Development of ANN potential for Si(100) surface and validation of calculation accuracy. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
ｍore...
Education (2)：
- - 1989 Kyoto University
- - 1987 Kyoto University Faculty of Engineering School of Engineering Science
Professional career (1)：
Work history (4)：
- 2010/04 - 現在 岡山県立大学 情報工学部 教授
- 2003/06 - 2010/03 岡山県立大学 情報工学部 助教授 准教授
- 2001/04 - 2003/05 株式会社SUMCO 技術開発部
- 1989/04 - 2001/03 住友金属工業株式会社 未来技術研究所
Committee career (2)：
- 2003/06 - 現在 応用物理学会 中国四国支部幹事
- 2003 - 現在 日本学術振興会145委員会 幹事
Awards (1)：
Association Membership(s) (6)：
日本学術振興会145委員会
, シリコンテクノロジー分科会
, 日本機械学会
, 応用物理学会
, 日本材料学会
, 電子情報通信学会
