Inoue Tomoyasu

イノウエトモヤス | Inoue Tomoyasu

Affiliation and department：
Job title： Professor
Homepage URL (1)： http://www.iwakimu.ac.jp/dept/staff/inoue_tomoyasu.html

Research field (2)： Crystal engineering , Applied materials

Research keywords (2)：半導体工学 , Semiconductor Technology

Research theme for competitive and other funds (11)：

2014 - 2017 方位選択エピタキシによる複合面方位構造形成における異種方位領域間の完全分離技術
2011 - 2013 Hybrid orientation structure formation by electron beam induced orientation selective epitaxial growth
2008 - 2011 Study on two dimensional control of orientation selective epitaxial growth of oxide thin films
2006 - 低速電子ビーム誘起によるシリコン基板上のCeO₂薄膜の方位選択エピタキシャル成長
2006 - Electorn Beam Induced Orientation Selective Epitaxial Growth of CeO₂(100) Layers on Si(100) Substrates

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Papers (105)：

INOUE Tomoyasu. Developments in Hybrid Orientation Technology by Electron Beam Induced Orientation Selective Epitaxial Growth. 2015. 28. 28. 9-17
Tomoyasu Inoue, Shigenari Shida. Highly separated hybrid orientation structure of CeO2(100) and (110) on Si(100) substrates by electron beam-induced orientation-selective epitaxy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2014. 32. 3. 03D108
T. Inoue, S. Shida. Hybrid Orientation Selective Epitaxial Growth of CeO<sub>2</sub>(100) and (110) regions on Si(100) Substrates. Proc. 12th Int. Symp. Sputtering & Plasma Processes. 2013. 87-90
Tomoyasu Inoue, Shigenari Shida. Spatially varied orientation selective epitaxial growth of CeO2(100) and (110) regions on Si(100) substrates by reactive magnetron sputtering utilizing electron beam irradiation. THIN SOLID FILMS. 2012. 520. 19. 6179-6182
T. Inoue, S. Shida. Hybrid Orientation Substrate Fabrication using Electron Beam Induced Orientaion Selective Epitaxial Growth of CeO₂(100) and (110) areas on Si(100) Substrates. Electrochem. Soc. Trans. 2012. 45. 443-451

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MISC (74)：

T. Inoue, H. Ohtake, J. Otani, S. Shida. Optimization of growth parameters in electron-beam-induced orientation selective epitaxy of CeO(2)(100)/Si(100) structures. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2008. 155. 11. G237-G240
Tomoyasu Inoue. Orientation selective epitaxial growth by reactive dc magnetron sputtering with substrate bias. Research Development on Crystal Growth. 2005. 4. 251-268
Si(111) 基板上の CeO₂ 膜エピタキシャル成長. 第1回21世紀連合シンポジウム「科学技術と人間」論文集. 2002. ISSN 1347-9717 p. 291-294
ガラス基板上の高配向多結晶 Si 膜の成長 - CeO₂ 中間層の効果 -. 電気化学会第69回学術大会シンポジウム論文集. 2002. ISSN 1341-3848 p.29-34
電子ビーム支援蒸着法により形成したエピタキシャルCeO₂/Si(100)の表面微細構造. 電気化学会論文集. 2001. 15-22

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Patents (7)：

半導体装置及びその製造方法
半導体装置及びその製造方法
Semiconductor device and manufacturing method thereof
半導体装置
半導体装置の製造方法

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Books (22)：

Developments in Hybrid Orientation Technology by Electron Beam Induced Orientation Selective Epitaxial Growth
2015
Spatially Varied Orientation Selective Epitaxial Growth of (100) and (110) CeO<sub>2</sub> Layers on Si(100) Substrates using Absorbed Electron Imaging System
2011
Oxide Thin Film Technology -Growth and Applications-
Research Signpost Publishers Inc. Trivandrum India 2010
Recent Advances in Dielectric Materials
Nova Science Publishers, New York 2009 ISBN:9781606922668
Orientation selective epitaxial growth by reactive dc magnetron sputtering with substrate bias -CeO2(100) and (110) layers on Si(100) substrates-
Recent Res. Devel. Crystal Growth, 4 (2005), 251-268 2005

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Works (13)：

高温はんだ表面に形成される酸化膜厚さの測定
1992 - 1993
Oxide Thin film thickness measuremets of heat-treated solders
1992 - 1993
日本国特許半導体単結晶膜の製造方法:登録日1992年5月29日登録番号1669027
1992 -
日本国特許真空内試料加熱装置登録日1987年8月11日登録番号P1394374
1988 -
United States Patent Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same May 24,1988 Patent Number 4,746,803
1988 -

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Education (4)：

- 1971 Waseda University
- 1971 Waseda University Graduate School, Division of Science and Engineering
- 1969 Waseda University School of Science and Engineering
- 1969 Waseda University Faculty of Science and Engineering

Professional career (2)：

PhD (Waseda University)
工学修士 (早稲田大学)

Work history (5)：

- 現在いわき明星大学科学技術学部科学技術学科教授
1992 - 2001 いわき明星大学理工学部電子工学科教授
2001 - - いわき明星大学理工学部電子情報学科教授
1987 - 1992 いわき明星大学理工学部電子工学科助教授
1971 - 1987 東京芝浦電気 (株) 総合研究所研究職

Committee career (9)：

1994/01 - 現在福島県技術顧問
1987/04 - 2008/07 マイクロエレクトロニクス研究機構幹事
2004/04 - 2006/03 電子情報通信学会東北支部評議員
1998/04 - 2000/03 電子情報通信学会東北支部評議員
1995/04 - 1999/03 応用物理学欧文誌刊行会電子出版化ワーキンググループ

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Association Membership(s) (10)：

Electrochemical Society , American Vacuum Society , Materials Research Society , American Physical Society , 応用物理学会 , Electrochemical Society , Ameriacn Physical Society , Japan Society of Applied Physics , Materials Research Society , American Vacuum Society

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