Rchr
J-GLOBAL ID:200901051830157214   Update date: Apr. 26, 2015

INOUE Tomoyasu

イノウエ トモヤス | INOUE Tomoyasu
Affiliation and department:
Job title: Professor
Homepage URL  (1): http://www.iwakimu.ac.jp/dept/staff/inoue_tomoyasu.html
Research field  (1): Applied materials science/Crystal engineering
Research keywords  (1): Semiconductor Technology
Research theme for competitive and other funds  (7):
  • 2011 - 2013 Hybrid orientation structure formation by electron beam induced orientation selective epitaxial growth
  • 2008 - 2011 Study on two dimensional control of orientation selective epitaxial growth of oxide thin films
  • 1995 - 1998 Epitaxial Growth of CeO2 on Si Substrates
  • Epitaxial Growth of CeO2 on Si Substrates
  • Crystalline Quality Improvement and Crystallographic Analysis using High Energy Ion Beams
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Papers (80):
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MISC (47):
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Patents (1):
  • Semiconductor device and manufacturing method thereof
Books (15):
  • Electron-beam Recrystallization of Silicon Layers on Silicon Dioxide
    Proceedings of Material Research Society Symposium, Boston, 1983 1984
  • Translation from "VLSI Technology" edited by S. M. Sze
    1985
  • Electron Beam Recrystallized SOI Structures
    KTK Scientific Publishers Tokyo, 1985 1985
  • Orientation Dependent Epitaxial Growth of CeO<sub>2</sub> on Si
    Proceedings of Materials Research Society Vol. 237 Fall Meeting 1991, Boston 1992
  • Crystallographic Analysis(110)CeO<sub>2</sub>/(100)Si using RBS/Channeling Technique
    Proceedings of Materials Research Society 1993
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Works (6):
  • United States Patent Recrystallized three dimensional integrated circuit Sep. 18,1984 Patent Number 4,472,729
    1984 -
  • United State Patents Method for manufacturing three-dimensional semiconductor device by sequential beam epitaxy Feb. 12,1985 Patent Number 4,498,226
    1985 -
  • United States Patents A method of forming a single crystal semiconductor layer from a non-crystalline material May 5,1987 Patent Number 4,662,949
    1987 -
  • United States Patent Method of manufacturing a semiconductor device involving a capacitor Apr. 7,1987 Patent Number 4,656,054
    1987 -
  • United States Patent Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same May 24,1988 Patent Number 4,746,803
    1988 -
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Education (2):
  • - 1969 Waseda University Faculty of Science and Engineering
  • - 1971 Waseda University Graduate School, Division of Science and Engineering
Professional career (1):
  • PhD (Waseda University)
Association Membership(s) (5):
American Vacuum Society ,  Materials Research Society ,  Japan Society of Applied Physics ,  Ameriacn Physical Society ,  Electrochemical Society
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