Rchr
J-GLOBAL ID:200901059334626094
Update date: Aug. 30, 2024
Hoshikawa Keigo
ホシカワ ケイゴ | Hoshikawa Keigo
Affiliation and department:
Research field (1):
Electric/electronic material engineering
Research keywords (1):
バルク結晶成長 シリコン単結晶 化合物半導体結晶 酸化物結晶 サファイア 酸化ガリウム単結晶
Research theme for competitive and other funds (13):
- 2010 - 2012 Mechanism of oxygen transportation in Czochralski Ge crystal growth from the melt covered by B_2O_3
- 2006 - 2007 Single Crystal Growth and Domain Control of Potassium Niobate Crystals by Vertical Bridgman method
- 2005 - 2006 Investigation of controlling the reaction at the interface between Si melt and silica glass
- 2003 - 2004 科学者の「問いの連鎖」に学ぶWEBベース学習支援システムとコンテンツの開発
- 2002 - 2004 Establishment of new method of crystal growth with well-controlled convection by electro-magnetic force
- 2002 - 2002 高強度・耐熱応力高濃度不純物添加シリコン結晶基板の提案
- 2001 - 2002 Study of non-equilibrium thermochemical reaction between Si melt and silica glass at high temperature in Czochralski Si crystal growth
- 1999 - 2000 Study of chemical reaction and phenomena of heat and mass transfer during CZ-silicon crystal growth
- 1995 - 1997 CHEMICAL ENGINEERING ANALYSIS AND CONTROL OF GROWTH PROCESS OF BULK SINGLE CRYSTALS FOR OPTO-ELECTRONICS DEVICES
- 1994 - 1994 史跡・博物館見学による作業的・体験的学習のための画像教材の開発
- 1992 - 1992 CZ法単結晶作成におけるTwisting
- 1991 - 1991 CZ法単結晶作成におけるTwisting
- 1990 - 1991 Study on Heat and Mass Transfer in the Magnetic Fields Applied Czochralski Method
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Papers (20):
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Etsuko Ohba, Takumi Kobayashi, Toshinori Taishi, Keigo Hoshikawa. Growth of (1 0 0), (0 1 0) and (0 0 1) β-Ga2O3 single crystals by vertical Bridgman method. Journal of Crystal Growth. 2021. 556
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Etsuko Ohba, Takumi Kobayashi, Motohisa Kado, Keigo Hoshikawa. Defect characterization of beta-Ga2O3 single crystals grown by vertical Bridgman method. JAPANESE JOURNAL OF APPLIED PHYSICS. 2016. 55. 12
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Yasuyuki Fujiwara, Toshinori Taishi, Keigo Hoshikawa, Keiichi Kohama, Hideki Iba. Anisotropy of ionic conduction in single-crystal LixLa( 1-x )/3NbO3 solid electrolyte grown by directional solidification. JAPANESE JOURNAL OF APPLIED PHYSICS. 2016. 55. 9
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Seiya Yamada, Masafumi Yoshimura, Shin-ichi Sakata, Toshinori Taishi, Keigo Hoshikawa. Colony structure in Ce-doped Al2O3/YAG eutectic systems grown by vertical Bridgman technique. JOURNAL OF CRYSTAL GROWTH. 2016. 448. 1-5
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Masafumi Yoshimura, Shin-Ichi Sakata, Seiya Yamada, Toshinori Taishi, Keigo Hoshikawa. The growth of Al2O3/YAG:Ce melt growth composite by the vertical Bridgman technique using an a-axis Al2O3 seed. Journal of Crystal Growth. 2015. 427. 16-20
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MISC (17):
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HOSHIKAWA Takeshi, TAISHI Toshinori, HUANG Xinming, UDA Satoshi, YAMATANI Muneyoshi, SHIRASAWA Katsuhiko, HOSHIKAWA Keigo. Si multicrystals grown by the Czochralski method with multi-seeds. J. Cryst. Growth. 2007. 307. 2. 466-471
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TAISHI Toshinori, HOSHIKAWA Takeshi, YAMATANI Muneyoshi, SHIRASAWA Katsuhiko, HUANG Xinming, UDA Satoshi, HOSHIKAWA Keigo. Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime. J. Cryst. Growth. 2007. 306. 2. 452-457
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TAISHI Toshinori, HUANG Xinming, YONENAGA Ichiro, HOSHIKAWA Keigo. Dislocation-free Czochralski Si crystal growth without a thin neck: dislocation behavior due to incomplete seeding. Journal of Crystal Growth. 2003. 258. 58-64
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Xinming Huang, Tsuyoshi Sato, Masami Nakanishi, Toshinori Taishi, Keigo Hoshikawa. High strength Si wafers with heavy B and Ge codoping. Jpn. J. Appl. Phys. 2003. 42. 12B. L1489-L1491
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Xuegong Yu, Toshinori Taishi, Xinming Huang, Deren Yang, Keigo Hoshikawa. Dislocation formation in Czochralski Si crystal growth using an annealed heavily B-doped Si seed. Jpn. J. Appl. Phys. 2003. 42. 11A. L1299-L1301
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Books (11):
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Vertical Bridgman Growth Method
Springer 2020
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Growth of β-Ga2O3 single crystal
Elsevier Inc 2019
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結晶育成装置の開発と育成技術
通研半導体技術史(装置編)編集委員会 2016
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シリコン結晶技術 -成長・加工・欠陥制御・評価- 「CZ法」
日本学術振興会第145委員会 技術の伝承プロジェクト編集委員会編 2015
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サファイア結晶成長技術の最新動向
電子ジャーナル出版 2013
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Education (3):
- - 1969 Shinshu University
- - 1967 Shinshu University Faculty of Engineering
- - 1967 Shinshu University Faculty of Engineering
Professional career (1):
Work history (5):
- 2014/04 - 2017/03 Shinshu University Faculty of Engineering
- 2008/04 - 2014/03 Shinshu University Faculty of Engineering Visiting Professor
- 1992 - - 信州大学 教育学部 教授
- 1990 - - 東北大学 金属材料研究所 助教授
- 1987 - - NTTLSI研究所 主幹研究員
Committee career (4):
- 1976/01 - 2007/03 日本学術振興会結晶加工と評価技術第145委員会 幹事
- 1996/04 - 2006/10 日本学術振興会結晶成長の科学と技術第161委員会 幹事
- 1993/04 - 1997/03 日本結晶成長学会 バルク成長分科会幹事長
- 1993/04 - 1996/03 応用物理学会 欧文誌(Jpn.J.Appl.Phsy)論文編集委員
Awards (9):
Association Membership(s) (6):
日本産業技術教育学会
, 米国電気化学会(ECS)
, 日本結晶成長学会
, 日本金属学会
, 応用物理学会
, 電子情報通信学会
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