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J-GLOBAL ID:200901059334626094   Update date: Aug. 30, 2024

Hoshikawa Keigo

ホシカワ ケイゴ | Hoshikawa Keigo
Affiliation and department:
Research field  (1): Electric/electronic material engineering
Research keywords  (1): バルク結晶成長 シリコン単結晶 化合物半導体結晶 酸化物結晶 サファイア 酸化ガリウム単結晶
Research theme for competitive and other funds  (13):
  • 2010 - 2012 Mechanism of oxygen transportation in Czochralski Ge crystal growth from the melt covered by B_2O_3
  • 2006 - 2007 Single Crystal Growth and Domain Control of Potassium Niobate Crystals by Vertical Bridgman method
  • 2005 - 2006 Investigation of controlling the reaction at the interface between Si melt and silica glass
  • 2003 - 2004 科学者の「問いの連鎖」に学ぶWEBベース学習支援システムとコンテンツの開発
  • 2002 - 2004 Establishment of new method of crystal growth with well-controlled convection by electro-magnetic force
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Papers (20):
  • Etsuko Ohba, Takumi Kobayashi, Toshinori Taishi, Keigo Hoshikawa. Growth of (1 0 0), (0 1 0) and (0 0 1) β-Ga2O3 single crystals by vertical Bridgman method. Journal of Crystal Growth. 2021. 556
  • Etsuko Ohba, Takumi Kobayashi, Motohisa Kado, Keigo Hoshikawa. Defect characterization of beta-Ga2O3 single crystals grown by vertical Bridgman method. JAPANESE JOURNAL OF APPLIED PHYSICS. 2016. 55. 12
  • Yasuyuki Fujiwara, Toshinori Taishi, Keigo Hoshikawa, Keiichi Kohama, Hideki Iba. Anisotropy of ionic conduction in single-crystal LixLa( 1-x )/3NbO3 solid electrolyte grown by directional solidification. JAPANESE JOURNAL OF APPLIED PHYSICS. 2016. 55. 9
  • Seiya Yamada, Masafumi Yoshimura, Shin-ichi Sakata, Toshinori Taishi, Keigo Hoshikawa. Colony structure in Ce-doped Al2O3/YAG eutectic systems grown by vertical Bridgman technique. JOURNAL OF CRYSTAL GROWTH. 2016. 448. 1-5
  • Masafumi Yoshimura, Shin-Ichi Sakata, Seiya Yamada, Toshinori Taishi, Keigo Hoshikawa. The growth of Al2O3/YAG:Ce melt growth composite by the vertical Bridgman technique using an a-axis Al2O3 seed. Journal of Crystal Growth. 2015. 427. 16-20
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MISC (17):
  • HOSHIKAWA Takeshi, TAISHI Toshinori, HUANG Xinming, UDA Satoshi, YAMATANI Muneyoshi, SHIRASAWA Katsuhiko, HOSHIKAWA Keigo. Si multicrystals grown by the Czochralski method with multi-seeds. J. Cryst. Growth. 2007. 307. 2. 466-471
  • TAISHI Toshinori, HOSHIKAWA Takeshi, YAMATANI Muneyoshi, SHIRASAWA Katsuhiko, HUANG Xinming, UDA Satoshi, HOSHIKAWA Keigo. Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime. J. Cryst. Growth. 2007. 306. 2. 452-457
  • TAISHI Toshinori, HUANG Xinming, YONENAGA Ichiro, HOSHIKAWA Keigo. Dislocation-free Czochralski Si crystal growth without a thin neck: dislocation behavior due to incomplete seeding. Journal of Crystal Growth. 2003. 258. 58-64
  • Xinming Huang, Tsuyoshi Sato, Masami Nakanishi, Toshinori Taishi, Keigo Hoshikawa. High strength Si wafers with heavy B and Ge codoping. Jpn. J. Appl. Phys. 2003. 42. 12B. L1489-L1491
  • Xuegong Yu, Toshinori Taishi, Xinming Huang, Deren Yang, Keigo Hoshikawa. Dislocation formation in Czochralski Si crystal growth using an annealed heavily B-doped Si seed. Jpn. J. Appl. Phys. 2003. 42. 11A. L1299-L1301
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Books (11):
  • Vertical Bridgman Growth Method
    Springer 2020
  • Growth of β-Ga2O3 single crystal
    Elsevier Inc 2019
  • 結晶育成装置の開発と育成技術
    通研半導体技術史(装置編)編集委員会 2016
  • シリコン結晶技術 -成長・加工・欠陥制御・評価- 「CZ法」
    日本学術振興会第145委員会 技術の伝承プロジェクト編集委員会編 2015
  • サファイア結晶成長技術の最新動向
    電子ジャーナル出版 2013
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Education (3):
  • - 1969 Shinshu University
  • - 1967 Shinshu University Faculty of Engineering
  • - 1967 Shinshu University Faculty of Engineering
Professional career (1):
  • Doctor of Engineering
Work history (5):
  • 2014/04 - 2017/03 Shinshu University Faculty of Engineering
  • 2008/04 - 2014/03 Shinshu University Faculty of Engineering Visiting Professor
  • 1992 - - 信州大学 教育学部 教授
  • 1990 - - 東北大学 金属材料研究所 助教授
  • 1987 - - NTTLSI研究所 主幹研究員
Committee career (4):
  • 1976/01 - 2007/03 日本学術振興会結晶加工と評価技術第145委員会 幹事
  • 1996/04 - 2006/10 日本学術振興会結晶成長の科学と技術第161委員会 幹事
  • 1993/04 - 1997/03 日本結晶成長学会 バルク成長分科会幹事長
  • 1993/04 - 1996/03 応用物理学会 欧文誌(Jpn.J.Appl.Phsy)論文編集委員
Awards (9):
  • 2018/11 - 日本結晶成長学会 業績賞・赤崎勇賞 機能性バルク単結晶育成技術の開拓と実用化
  • 2014/07 - 信濃毎日新聞社 信毎賞 多種の機能性単結晶の研究開発と実用化により電子産業界への多大な貢献
  • 2012/09 - 応用物理学会 応用物理学会フェロー表彰
  • 2004/08 - 日本結晶成長学会 貢献賞
  • 2003/07 - 日本結晶成長学会 論文賞
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Association Membership(s) (6):
日本産業技術教育学会 ,  米国電気化学会(ECS) ,  日本結晶成長学会 ,  日本金属学会 ,  応用物理学会 ,  電子情報通信学会
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