Rchr
J-GLOBAL ID:200901061321969701
Update date: Sep. 13, 2022
Kobayashi Hikaru
コバヤシ ヒカル | Kobayashi Hikaru
Affiliation and department:
Research field (3):
Energy chemistry
, Electric/electronic material engineering
, Semiconductors, optical and atomic physics
Research keywords (6):
太陽電池
, 電子材料物性
, 半導体・誘電体物性
, solar cell
, Electronic Materials Science
, semiconductor and dielectrics physics
Research theme for competitive and other funds (6):
- 2000 - 2005 シリコン酸化膜の低温成長に関する研究
- 2000 - 2005 MIS型太陽電池に関する研究
- 半導体のバンドギャップ内の界面準位に関する研究
- Study on Interface States in Semiconductor Band-gap
- Study on the Low Temperatrue Formation of Silicon Oxide Layers
- Study on MIS solar cells
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MISC (340):
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Annealing-induced structural changes in TlInGaAsN heterostructures studied by X-ray photoelectron spectroscopy. Proceedings of the 23rd International Conference on Indium Phosphide and Related Materials. 2011. pp.110-113
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Annealing-induced structural changes in TlInGaAsN heterostructures studied by X-ray photoelectron spectroscopy. Proceedings of the 23rd International Conference on Indium Phosphide and Related Materials. 2011. pp.110-113
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Kentaro Imamura, Masao Takahashi, Asuha, Yasuhiro Hirayama, Shigeki Imai, Hikaru Kobayashi. Nitric acid oxidation of Si method at 120 degrees C: HNO3 concentration dependence. JOURNAL OF APPLIED PHYSICS. 2010. 107. 5
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Kentaro Imamura, Masao Takahashi, Asuha, Yasuhiro Hirayama, Shigeki Imai, Hikaru Kobayashi. Nitric acid oxidation of Si method at 120 degrees C: HNO3 concentration dependence. JOURNAL OF APPLIED PHYSICS. 2010. 107. 5
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Woo-Byoung Kim, Masayoshi Nishiyama, Hikaru Kobayashi. Removal of charging on SiO2/Si structure during photoelectron spectroscopy measurements by metal overlayer. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA. 2010. 176. 1-3. 8-12
more...
Patents (49):
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Semiconductor and a Method for Manufacturing on Oxide Film on the Surface of a Semiconductor Substrate
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Semiconductor and a Method for Manufacturing on Oxide Film on the Surface of a Semiconductor Substrate
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Semiconductor and a Method for Manufacturing on Oxide Film on the Surface of a Semiconductor Substrate
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Method of Apparatus for Manufacturing Semiconductor Devices
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Method of Apparatus for Manufacturing Semiconductor Devices
more...
Books (3):
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Determination of the Energy Distribution of Interface States in the Si forbidden gap by XPS measurements under bias
Precision Science and Technology for Perfects Surfacrs 1999
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Ultrathin MOS gate insulators : surface preparation, growth, and Interface control
Silicon Nitride and Silicon Dioxide Thin Insulating Films 1997
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Interface states for MOS devices with an ultrathin oxide layers
The phsics and chemistry of SiO<sub>2</sub> and the SiO<sub>2</sub> interface -3 1996
Works (3):
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硝酸酸化法を用いる新規シリコン低温酸化装置の実用化研究
2005 -
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極限ゲート構造によるシステムディスプレイの超低消費電力化
2005 -
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新産業創造指向インターナノサイエンス
2005 -
Education (4):
- - 1984 Kyoto University
- - 1984 Kyoto University Graduate School, Division of Natural Science Chemistry
- - 1979 Osaka University School of Science Department of Chemistry
- - 1979 Osaka University Faculty of Science Department of Chemistry
Professional career (1):
Association Membership(s) (7):
The Electrochemical Society
, 日本物理学会
, American Physical society
, 日本表面科学会
, American Association for the Advancement of Science
, 応用物理学会
, 日本化学会
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