Rchr
J-GLOBAL ID:200901061989169898   Update date: Oct. 02, 2024

Ohno Yutaka

オオノ ユタカ | Ohno Yutaka
Affiliation and department:
Homepage URL  (1): https://www.r-info.tohoku.ac.jp/ja/fb89442dc87d7bf505383217df5bbcb0.html
Research field  (3): Crystal engineering ,  Composite materials and interfaces ,  Earth resource engineering, energy science
Research theme for competitive and other funds  (27):
  • 2021 - 2025 Control of nanostructures of directly-bonded Si/diamond interfaces by annealing
  • 2017 - 2024 多結晶材料情報学による一般粒界物性理論の確立とスマートシリコンインゴットの創製
  • 2017 - 2024 LT結晶育成における転位形成と多結晶化発生メカニズム解明
  • 2018 - 2021 Potential induced degradation mechanism due to Na impurities in Si megasolar systems investigated by in-situ transmission electron microscopy
  • 2018 - 2019 正極活物質のカソードルミネセンス
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Papers (129):
  • Ryo Kagawa, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa, Jianbo Liang. Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth. Functional Diamond. 2024
  • Momoko Deura, Yutaka Ohno, Ichiro Yonenaga, Hiroyuki Fukuyama. Mechanism of SiC formation by Si surface carbonization using CO gas. Applied Surface Science. 2024. 159965-159965
  • Kenta Yamakoshi [Co-1st], Yutaka Ohno [Co-1st], Kentaro Kutsukake, Takuto Kojima, Tatsuya Yokoi, Hideto Yoshida, Hiroyuki Tanaka, Xin Liu, Hiroaki Kudo, Noritaka Usami. Multicrystalline Informatics Applied to Multicrystalline Silicon for Unraveling the Microscopic Root Cause of Dislocation Generation. Advanced Materials. 2023
  • Ryo Kagawa, Zhe Cheng, Keisuke Kawamura, Yutaka Ohno, Chiharu Moriyama, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Koji Inoue, Yasuyoshi Nagai, et al. High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C-SiC/Diamond Junctions for Practical Device Processes. Small. 2023
  • Kazuki Sawai, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa. Characterization of Ga-face/Ga-face and N-face/N-face interfaces with antiparallel polarizations fabricated by surface-activated bonding of freestanding GaN wafers. Japanese Journal of Applied Physics. 2023. 62. SN. SN1013-SN1013
more...
MISC (80):
  • Noritaka Usami, Kentaro Kutsukake, Takuto Kojima, Hiroaki Kudo, Tatsuya Yokoi, Yutaka Ohno. Multicrystalline informatics: a methodology to advance materials science by unraveling complex phenomena. Science and Technology of Advanced Materials. 2024. 25. 1
  • 大野裕. 3次元アトムプローブと透過電子顕微鏡を用いた相関顕微鏡法による粒界・不純物の精密評価. 2023. 49. 4. 49-4-07/1-49-4-07/7
  • Shota Ishimi, Makoto Hirose, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Jianbo Liang, Naoteru Shigekawa. Fabrication and Electrical Characterization of GaAs/GaN Junctions. ECS Transactions. 2023. 112. 3. 111-118
  • 重川直輝, 梁剣波, 大野裕. 表面活性化接合によるX on diamond構造. GS YUASA Technical Report. 2022. 19. 2. 1-9
  • Jianbo Liang, Yutaka Ohno, Naoteru Shigekawa. Direct Bonding of Diamond and Dissimilar Materials at Room Temperature. Materia Japan. 2022. 61. 6. 334-339
more...
Patents (2):
  • タンタル酸リチウム結晶における転位評価方法
  • 窒化物半導体積層構造体前駆体、窒化物半導体積層構造体、半導体装置、窒化物半導体積層構造体前駆体の製造方法、窒化物半導体積層構造体の製造方法
Books (3):
  • 多結晶材料情報学
    共立出版 2024
  • In-situ Electron Microscopy
    WILEY-VCH 2012 ISBN:3527319735
  • Optoelectronic Devices and Properties
    INTECH 2011 ISBN:9789533075112
Lectures and oral presentations  (757):
  • 低温FIB法を用いたシリコン粒界における酸素偏析サイトの精密評価
    (第71回応用物理学会春季学術講演会)
  • シリコン非対称粒界の形成過程とその機能
    (第71回応用物理学会春季学術講演会)
  • 常温接合技術による新機能界面・デバイスの創成
    (ワイドギャップ半導体学会第14回研究会)
  • シリコン非対称傾角粒界の形成機構
    (東北大学金属材料研究所附属量子エネルギー材料科学国際研究センター 2023年度大洗・アルファ合同研究会)
  • 高放熱パワーデバイス応用に向けたGaN/3C-SiC on-polycrystalline diamond HEMTs構造の作製
    (第84回応用物理学会秋季学術講演会)
more...
Education (2):
  • - 1992 Osaka University 基礎工学研究科 物理系専攻
  • - 1990 Osaka University 基礎工学部 物性物理工学科
Professional career (2):
  • 博士(理学) (Osaka University)
  • 修士(工学) (Osaka University)
Committee career (12):
  • 2020/05 - 現在 (社)電子実装工学研究所 接合界面創成技術研究会 外部学会委員
  • 2022/05 - 日本顕微鏡学会 第78回学術講演会プログラム委員
  • 2017/02 - 2020/09 日本学術振興会接合界面創成技術第191委員会 委員
  • 2018/04 - 10th International Workshop on Crystalline Silicon for Solar Cells Local Steering Committee
  • 2016/06 - 2017/08 29th International Conference on Defects in Semiconductors International Programme Committee & Local Program Subcommittee
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Awards (14):
  • 2024/03 - The Japan Society of Applied Physics 45th JSAP Outstanding Paper Award
  • 2021/10 - 7th International Workshop on Low Temperature Bonding for 3D Integration Best Presentation Award Fabrication of Ga2O3/Si direct bonding interface for high power device applications
  • 2021/10 - 7th International Workshop on Low Temperature Bonding for 3D Integration Best Student Presentation Award Fabrication of GaN/SiC/diamond structure for efficient thermal management of power device
  • 2019/05 - 6th International Workshop on Low Temperature Bonding for 3D Integration Best Poster Presentation Award Fabrication of Diamond/Cu Direct Bonding for Power Device Application
  • 2019/05 - 6th International Workshop on Low Temperature Bonding for 3D Integration Best Presentation Award Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature
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Association Membership(s) (2):
The Japan Society of Applied Physics ,  The Japanese Society of Microscopy
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