Research field (1)：
Electronic devices and equipment
Research keywords (1)：
半導体デバイス
Research theme for competitive and other funds (1)：
先端半導体デバイス・回路(システム)と材料に関する研究
Papers (13)：
Kenichiro Takakura, Kensuke Matsumoto, Kousei Tateishi, Masashi Yoneoka, Isao Tsunoda, Shigekazu Suzuki, Shinji Kawatsuma. Assessment of Radiation Tolerance of Flash Memory by γ-Ray Irradiation. J. Robotics Mechatronics. 2024. 36. 1. 88-94
Kouki Fukushima, Naoki Mizunuma, Tatsuya Uematsu, Kyoko Shimizu, Takehiro Ota, Isao Tsunoda, Masashi Yoneoka, Haruhiko Udono, Kenichiro Takakura. Study of deep levels in the Mg2Si grown by vertical Bridgeman method. Japanese Journal of Applied Physics. 2022. 62. SD. SD1012-SD1012
Kenichiro Takakura, Masato Hori, Masashi Yoneoka, Isao Tsunoda, Toshiyuki Nakashima, Eddy Simoen, Cor Claeys. Thermal recovery process of electron irradiated Si1-xCx source/drain n-MOSFETs. Physica Status Solidi (C) Current Topics in Solid State Physics. 2015. 12. 12. 1405-1408
Hori Masato, Yoneoka Masashi, Nakashima Toshiyuki, Simoen Eddy, Claeys Cor, Tsunoda Isao, Takakura Kenichiro. The influence of annealing for Si0.99C0.01 S/D n-MOSFET with electron irradiation. JSAP Annual Meetings Extended Abstracts. 2014. 2014.2. 2649-2649
