Yasuo Takahashi

タカハシヤスオ | Yasuo Takahashi

Affiliation and department：
Job title： Professor
Homepage URL (2)： http://www.ist.hokudai.ac.jp/labo/nano-mat/ , http://www.nano.eng.hokudai.ac.jp/~bukkou/index.html

Research field (5)： Physical properties of metals , Sensitivity informatics/Soft computing , Electron device/Electronic equipment , Microdevices/Nanodevices , Condensed matter physics I

Research keywords (6)： Nanoscience , Mesoscopic devices , Single electronics , Silicon MOS devices , Metal silicide , Atomic layer epitaxy

Research theme for competitive and other funds (1)：

1992 - Fabrication of semiconductor nanodots and metal nanodots and their device applications, especially for single electronics.

Papers (115)：

H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, Y. Ono. Detection of single holes generated by impact ionization in silicon. Applied Physics Letters. 2018. 113
Atsushi Tsurumaki-Fukuchi,* Ryosuke Nakagawa, Masashi Arita, and Yasuo Takahashi. EELS Analysis on Oxygen Scavenging Effect in a Resistive Switching Structure of Pt/Ta/SrTiO3/Pt,. MRS Advances. 2018. 33. 3. 1925-1930
Atsushi Tsurumaki-Fukuchi, Ryosuke Nakagawa, Masashi Arita, and Yasuo Takahashi. Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx. ACS Applied Materials & Interface. 2018. 10. 5609-5617
Yuchao Yang, Yasuo Takahashi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, M. Moors, M. Buckwell, A. Mehonic, and A. J. Kenyon. Probing Electrochemistry at the Nanoscale: In Situ TEM and STM Characterizations of Conducting Filaments in Memristive Devices. Journal of Electroceramics. 2017. 39. 1-4. 73-93
Ryusuke Ishikawa, Shuichiro Hirata, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi, Masaki Kudo, and Sho Matsumura. In-situ electron microscopy of Cu movement in MoOx/Al2O3 bilayer CBRAM during cyclic switching process. ECS Transactions. 2017. 80. 10. 903-910

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MISC (4)：

Tunnel conductance measurements of nano-regions performed in transmission electron microscopes. 2008. 43. 3. 181-187
Integrated Circuits made of Silicon Single-Electron Devices. Oyo Buturi. 2008. 77. 3. 281-285
Evolution of New Functional Devices as Beyond CMOS. The Journal of the Institute of Electrical Engineers of Japan. 2008. 128. 3. 169-171
Si Nanodot Device Fabricated by Thermal Oxidation and Their Applications. 2011. 470. 175-183

Patents (6)：

抵抗変化型メモリ
受光装置
抵抗変化型メモリとその制御方法及び製造方法
単電子ターンスタイルデバイスおよびその製造方法
抵抗変化型メモリとその製造方法

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Books (1)：

Developing Nanosilicon Technology and Device Applications
2010

Lectures and oral presentations (398)：

3S16 微量のコレステリック液晶を添加したTN液晶セルの特性
(液晶討論会講演予稿集 1978)
2R07 TNセルの特性(第2報)
(液晶討論会講演予稿集 1979)
2R16 TNセルの特性に及ぼす各種のパラメータの影響
(液晶討論会講演予稿集 1980)
6-3 液晶表示素子の低温における応答性
(テレビジョン学会全国大会講演予稿集 1981)
4U19 液晶材料の弾性定数の測定法
(液晶討論会講演予稿集 1981)

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Education (2)：

- 1977 Tohoku University
- 1982 Tohoku University Graduate School, Division of Engineering

Professional career (1)：

Ph. D, 1982 (Tohoku University)

Work history (7)：

1982 - 1983 Researcher,NTT (Nippon Telegraph and Telephone Corporation) Musashino Lab.
1983 - 1986 Researcher,NTT Atsugi Lab.
1986 - 1990 Chief Researcher,NTT LSI Lab.
1990 - 1996 Senior Research Engineer supervisor,NTT LSI Labs.
1996 - 1999 Senior Research Engineer supervisor,NTT Basic Research Labs.

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Awards (2)：

2014/04 - The Japan Society of Applied Phisics APEX/JJAP Editorial Contribution Award APEX/JJAP Editorial Contribution Award
1998 - In 1998, Int. Solid State Devices and Materials Conf., Best Paper Award In 1999, IEEE Int. SOI Conference, Best Paper Award In 2003, IEEE Computer Society 33th ISMVL Distinctive Contributed Paper Award In 2003, Award for the best original paper in J・・・

Association Membership(s) (2)：

The Institute of Electronics Information and Comunication Engineers , IEEE

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