Atsushi Tsurumaki-Fukuchi,* Ryosuke Nakagawa, Masashi Arita, and Yasuo Takahashi. EELS Analysis on Oxygen Scavenging Effect in a Resistive Switching Structure of Pt/Ta/SrTiO3/Pt,. MRS Advances. 2018. 33. 3. 1925-1930
Atsushi Tsurumaki-Fukuchi, Ryosuke Nakagawa, Masashi Arita, and Yasuo Takahashi. Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx. ACS Applied Materials & Interface. 2018. 10. 5609-5617
Yuchao Yang, Yasuo Takahashi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, M. Moors, M. Buckwell, A. Mehonic, and A. J. Kenyon. Probing Electrochemistry at the Nanoscale: In Situ TEM and STM Characterizations of Conducting Filaments in Memristive Devices. Journal of Electroceramics. 2017. 39. 1-4. 73-93
Ryusuke Ishikawa, Shuichiro Hirata, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi, Masaki Kudo, and Sho Matsumura. In-situ electron microscopy of Cu movement in MoOx/Al2O3 bilayer CBRAM during cyclic switching process. ECS Transactions. 2017. 80. 10. 903-910
1990 - 1996 Senior Research Engineer supervisor,NTT LSI Labs.
1996 - 1999 Senior Research Engineer supervisor,NTT Basic Research Labs.
1999 - 2004 Group Leader, Silicon Nanodevice Research Group,NTT Basic Research Labs.
2002 - 2004 Dean,Device Physics Lab., NTT Basic Research Labs.
2014/04 - The Japan Society of Applied Phisics APEX/JJAP Editorial Contribution Award APEX/JJAP Editorial Contribution Award
1998 - In 1998, Int. Solid State Devices and Materials Conf., Best Paper Award In 1999, IEEE Int. SOI Conference, Best Paper Award In 2003, IEEE Computer Society 33th ISMVL Distinctive Contributed Paper Award In 2003, Award for the best original paper in J・・・
Association Membership(s) (2)：
The Institute of Electronics Information and Comunication Engineers