K. Mochizuki, T. Nishimura, T. Mishima. Estimation of Electronic Stopping Cross Sections of 4H-SiC for 2-26 MeV Al Random-Ion Implantations. Japanese Journal of Applied Physics. 2023. 62. 098001
K. Mochizuki, T. Nishimura, T. Mishima. Re-evaluation of energy dependence of electronic stopping cross-section for Al ions into 4H-SiC(0001). Jpn. J. Appl. Phys. 2022. 61. 110902
S. Sato, S. Li, A. D. Greentree, M. Deki, T. Nishimura, H. Watanabe, S. Nitta, Y. Honda, H. Amano, B. C. Gibson, et al. Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars. Sci. Rep. 2022. 12. 21208
T. Hidaka, K. Nakamura, H. Yoshimoto, R. Suzuki, Y. Zhao, Y. Ishiguro, T. Nishimura, K. Takai. Changing the structural and electronic properties of graphene and related two-dimensional materials using ion beam irradiation with NaCl sacrificial layers. Carbon Reports. 2022. 1. 22-31
Tomoaki Nishimura, Tetsu Kachi. Simulation of channeled implantation of magnesium ions in gallium nitride. Applied Physics Express. 2021. 14. 116502
E Garfunkel, D Starodub, S Sayan, L Goncharova, T Gustafsson, D Vanderbilt, RA Bartynski, YJ Chabal, T Nishimura. Ion scattering studies of high-K gate stacks. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY. 2003. 226. U387-U387