Rchr

J-GLOBAL ID：200901075294379191 Update date: May. 18, 2020

Ishibashi Shoji

イシバシショウジ | Ishibashi Shoji

Affiliation and department：
Homepage URL (1)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=S76832814

Research field (3)： Structural and functional materials , Inorganic materials , Metallic materials

Research keywords (1)：計算材料科学計算物質科学第一原理計算電子状態陽電子消滅

MISC (14)：

A. Uedono, K. Ikeuchi, T. Otsuka, K. Yamabe, K. Eguchi, M. Takayanagi, S. Ishibashi, T. Ohdaira, M. Muramatsu, R. Suzuki. Vacancy-impurity complexes in polycrystalline Si used as gate electrodes of HfSiON-based metal-oxide-semiconductors probed using monoenergetic positron beams. JOURNAL OF APPLIED PHYSICS. 2006. 100. 3. 034509-1-034509-6
Ab initio study of Si-rich 6H-SiC(000-1)-2x2 surfaces. Activity report of 5th International Symposium on Atomic Level Characterizations for New materials and Devices. 2006. 471-473
S Ishibashi, T Tamura, M Kohyama, K Terakura. Ab initio electronic-structure calculations for alpha-(BEDT-TTF)(2)I-3. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN. 2006. 75. 1. 015005-1-1
S Ishibashi, H Tanaka, M Kohyama, M Tokumoto, A Kobayashi, H Kobayashi, K Terakura. Ab initio electronic structure calculation for single-component molecular conductor Au(tmdt)(2) (tmdt = trimethylenetetrathiafulvalenedithiolate). JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN. 2005. 74. 3. 843-846
A Uedono, N Hattori, H Naruoka, S Ishibashi, R Suzuki, T Ohdaira. Vacancy-type defects in strained-Si layers deposited on SiGe/Si structures probed by using monoenergetic positron beams. JOURNAL OF APPLIED PHYSICS. 2005. 97. 2. 023532-1-023532-5

ｍore...

Association Membership(s) (3)：

日本陽電子科学会 , 日本金属学会 , 日本物理学会

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