Rchr
J-GLOBAL ID：200901075294379191   Update date: Nov. 20, 2024

Ishibashi Shoji

イシバシ ショウジ | Ishibashi Shoji
Affiliation and department：
National Institute of Advanced Industrial Science and Technology Research Center for Computational Design of Advanced Functional Materials

About National Institute of Advanced Industrial Science and Technology Research Center for Computational Design of Advanced Functional Materials


Job title： Career Researcher
Homepage URL  (1)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=S76832814
Research field  (3)： Structural and functional materials ,  Inorganic materials ,  Metallic materials
Research keywords  (1)： 計算材料科学 計算物質科学 第一原理計算 電子状態 陽電子消滅
Papers (140)：
  • Keishi Sunami, Sachio Horiuchi, Shoji Ishibashi, Jun'ya Tsutsumi. Unveiling High Electro-Optic Performance in a Proton-π-Electron-Coupled Ferroelectric Crystal. Advanced Electronic Materials. 2024. 10. 2400346
  • Akira Uedono, Claudia Fleischmann, Jean-Philippe Soulié, Mustafa Ayyad, Jeroen E. Scheerder, Christoph Adelmann, Jun Uzuhashi, Tadakatsu Ohkubo, Koji Michishio, Nagayasu Oshima, et al. Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography. ACS Applied Electronic Materials. 2024
  • K. Shima, R. Tanaka, S. Takashima, K. Ueno, M. Edo, A. Uedono, S. Ishibashi, and, S. F. Chichibu. Temporary and spatially resolved luminescence studies of p-GaN segments fabricated by vacancy-guided redistribution of Mg using sequential ion implantation of Mg and N. Proceedings of IWJT2023: IEEE Xplore Digital Library (2023). 2023. 1-4
  • Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, et al. Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam. Gallium Nitride Materials and Devices XVIII. 2023
  • Sachio Horiuchi, Hiromi Minemawari, Shoji Ishibashi. Competition of polar and antipolar states hidden behind a variety of polarization switching modes in hydrogen-bonded molecular chains. Materials Horizons. 2023
ｍore...
MISC (42)：
  • 上殿明良, 角谷正友, 石橋章司, 大島永康, 鈴木良一. Vacancy-type defects in InxGa1-xN films probed by using monoenergetic positron beams. 陽電子科学. 2014. 3. 3-9
  • Kohyama M, Tanaka S, Bhattacharya Somesh, Sharma Vikas, Wang Hao, Shiihara Y, Ishibashi S. 27pXS-2 Ab-Initio Analysis of Local Energy and Local Stress : Application to Metallic Grain Boundaries and Interfaces between Dissimilar Materials. Meeting Abstracts of the Physical Society of Japan. 2013. 68. 0
  • Shoji Ishibashi, Sachio Horiuchi, Reiji Kumai, Kiyoyuki Terakura. First-principles calculations of spontaneous polarization for TTF-QBrCl3. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 2012. 249. 5. 1008-1011
  • KOHYAMA Masanori, WANG Hao, TANAKA Shingo, SHIIHARA Yoshinori, ISHIBASHI Shoji. 1002 First-Principles Analysis of Local Energy and Local Stress : Applications to Metallic Grain Boundaries and Defects. The Proceedings of The Computational Mechanics Conference. 2012. 2012. 0. 492-493
  • Kohyama Masanori, Saitou Shigeki, Tanaka Shingo, Shiihara Yoshinori, Ishibashi Shoji. 26pCL-2 First-Principles Calculations of Local Energy and Local Stress : Application to Metallic Grain Boundaries. Meeting Abstracts of the Physical Society of Japan. 2012. 67. 0
ｍore...
Association Membership(s) (3)：
日本陽電子科学会 ,  日本金属学会 ,  日本物理学会
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