Rchr
J-GLOBAL ID：200901086627057750
Update date: Sep. 14, 2022
Miyake Masayasu
ミヤケ マサヤス | Miyake Masayasu
Affiliation and department：
Job title：
Professor
Research field (2)：
Electronic devices and equipment
, Electric/electronic material engineering
Research keywords (3)：
半導体物性
, 半導体デバイス
, semiconductor
Research theme for competitive and other funds (4)：
- 半導体中の不純物拡散に関する研究
- 半導体デバイスに関する研究
- Study on Impurity Diffusion in Semiconductors
- Study on Semiconductor Devices
MISC (119)：
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三宅雅保. MOSキャパシタ特性への光照射効果. 福山大学工学部紀要. 2008. 32. 17-27
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三宅雅保. 埋込チャネルMOSキャパシタのC-V特性の数値計算. 電子情報通信学会論文誌C. 2007. J90-C. 7. 567-576
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MIYAKE Masayasu. Numerical Simulation of Light Illumination Effects on Semiconductor Device Characteristics. The Memoirs of the Faculty of Engineering,Fukuyama University. 2006. 30. 27-35
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MIYAKE Masayasu. C-V Characteristics of Buried-Channel MOS Capacitors by Small-Signal Admittance Calculation. The Memoirs of the Faculty of Engineering,Fukuyama University. 2005. 29. 15-23
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MIYAKE Masayasu. Measurement of interface state density in MOSFETs by charge-pumping technique. The Memoirs of the Faculty of Engineering,Fukuyama University. 2004. 28. 9-17
ｍore...
Education (4)：
- - 1975 Kyoto University
- - 1975 Kyoto University Graduate School, Division of Engineering
- - 1973 Kyoto University Faculty of Engineering
- - 1973 Kyoto University Faculty of Engineering
Professional career (1)：
- (BLANK) (Kyoto University)
Work history (4)：
- 1985 - 1998 日本電信電話株式会社研究所
- 1985 - 1998 NTT
- 1975 - 1985 日本電信電話公社電気通信研究所
- 1975 - 1985 Nippon Telegraph and Telephone Public Corporation
Association Membership(s) (3)：
The Electrochemical Society
, 電子情報通信学会
, 応用物理学会
