Rchr
J-GLOBAL ID：200901090275601907
Update date: Sep. 01, 2020
Wada Toshimi
ワダ トシミ | Wada Toshimi
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Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T32632560
Research field (1)：
Electronic devices and equipment
Research theme for competitive and other funds (1)：
スピン・単一電子効果デバイスの研究
MISC (5)：
T Nakane, T Naka, H Kito, T Wada, A Matsushita, H Kumakura, T Mochiku. The effect of pressure on the T-c value of Y2C3 compounds. PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS. 2005. 426. 492-496
T Mochiku, T Nakane, H Kito, H Takeya, S Harjo, T Ishigaki, T Kamiyama, T Wada, K Hirata. Crystal structure of yttrium sesquicarbide. PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS. 2005. 426. 421-425
S Haraichi, T Wada, K Ishii, K Hikosaka. Spin-polarized tunneling in ultrasmall vertical ferromagnetic tunnel junctions. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 2004. 43. 9A. 6061-6064
T Sugaya, KY Jang, T Wada, A Sato, M Ogura, K Komori. V-grooved InGaAs quantum-wire FET fabricated under an As-2 flux in molecular-beam epitaxy. JOURNAL OF CRYSTAL GROWTH. 2003. 251. 1-4. 843-847
T. Sugaya, K. Y. Jang, T. Wada, M. Ogura, K. Komori. V-grooved InGaAs quantum-wire FET fabricated under an As2 flux in molecular beam epitaxy. MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. 2002. MBE XII 2002. 133-134
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