Art
J-GLOBAL ID：200902001343344803   Reference number：85A0234268

Photon-assisted dry etching of GaAs.

GaAsの光補助ドライエッチング
Author (3)：
BREWER P

About BREWER P

(Columbia Univ., New York)

About Columbia Univ., New York

, 
HALLE S

About HALLE S

(Columbia Univ., New York)

About Columbia Univ., New York

, 
OSGOOD R M JR

About OSGOOD R M JR

(Columbia Univ., New York)

About Columbia Univ., New York


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 45  Issue： 4  Page： 475-477  Publication year： Aug. 15, 1984 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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gallium arsenide

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,...
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JST classification (1)：
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Manufacturing technology of solid-state devices 
(NC03030V)

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Terms in the title (2)：
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GaAs

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, 
ドライエッチング

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