Dislocation reduction in epitaxial GaAs on Si (100)

FISCHER R; NEUMAN D; ZABEL H; MORKOC H; CHOI C; OTSUKA N

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J-GLOBAL ID：200902003437084565 Reference number：86A0383977

Dislocation reduction in epitaxial GaAs on Si (100)

Si(100)面上へのGaAsエピタキシャル膜における転位密度の低減

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Material：
Volume： 48 Issue： 18 Page： 1223-1225 Publication year： May. 05, 1986
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Lattice defects in semiconductors , Semiconductor thin films

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