Art
J-GLOBAL ID：200902005332940027   Reference number：83A0008435

Process and device design of a 1000-V MOS IC.

1000V MOSICのプロセスと素子設計
Author (2)：
YAMAGUCHI T

About YAMAGUCHI T

(Tektronix Inc., OR)

About Tektronix Inc., OR

, 
MORIMOTO S

About MORIMOTO S

(Tektronix Inc., OR)

About Tektronix Inc., OR


Material：
IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)

About IEEE Transactions on Electron Devices


Volume： 29  Issue： 8  Page： 1171-1178  Publication year： Aug. 1982 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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MOS integrated circuit

About MOS integrated circuit

,...
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JST classification (1)：
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General 
(NC03161C)

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Terms in the title (2)：
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プロセス

About プロセス

, 
素子設計

About 素子設計


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