Art
J-GLOBAL ID：200902007304095942   Reference number：90A0223516

Doping of diamond by coimplantation of carbon and boron.

炭素とほう素の同時注入によるダイヤモンドのドーピング
Author (3)：
SANDHU G S

About SANDHU G S

(Univ. North Carolina, North Carolina)

About Univ. North Carolina, North Carolina

, 
SWANSON M L

About SWANSON M L

(Univ. North Carolina, North Carolina)

About Univ. North Carolina, North Carolina

, 
CHU W K

About CHU W K

(Univ. North Carolina, North Carolina)

About Univ. North Carolina, North Carolina


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 55  Issue： 14  Page： 1397-1399  Publication year： Oct. 02, 1989 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
ion implantation

About ion implantation

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Irradiational changes semiconductors 
(BK16123E)

About Irradiational changes semiconductors

,  Lattice defects in semiconductors 
(BK12040Q)

About Lattice defects in semiconductors

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
炭素

About 炭素

, 
ほう素

About ほう素

, 
注入

About 注入

, 
ダイヤモンド

About ダイヤモンド

, 
ドーピング

About ドーピング


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