Ga<sub>0.51</sub>In<sub>0.49</sub>P/GaAs HEMT’s exhibiting good electrical performance at cryogenic temperatures.

CHAN Y-J; PAVLIDIS D; RAZEGHI M; OMNES F

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J-GLOBAL ID：200902010165273670 Reference number：90A0795598

Ga_0.51In_0.49P/GaAs HEMT’s exhibiting good electrical performance at cryogenic temperatures.

低温で良好な電気的性能を示すGa_0.51In_0.49P/GaAs HEMT

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Volume： 37 Issue： 10 Page： 2141-2147 Publication year： Oct. 1990
JST Material Number： C0222A ISSN： 0018-9383 CODEN： IETDAI Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Ga0.51In0.49P/GaAs HEMT’s exhibiting good electrical performance at cryogenic temperatures.

Ga_0.51In_0.49P/GaAs HEMT’s exhibiting good electrical performance at cryogenic temperatures.