Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-Al<sub>x</sub>Ga<sub>1-x</sub>N heterojunctions.

KHAN M A; KUZNIA J N; VAN HOVE J M; PAN N; CARTER J

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J-GLOBAL ID：200902010801423946 Reference number：92A0523548

Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-Al_xGa_1-xN heterojunctions.

低圧有機金属化学蒸着したGaN-Al_xGa_1-xNヘテロ接合における二次元電子ガスの観測

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Volume： 60 Issue： 24 Page： 3027-3029 Publication year： Jun. 15, 1992
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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半導体-半導体接触【’81~’92】 , Solid-state plasmas

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Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-AlxGa1-xN heterojunctions.

Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-Al_xGa_1-xN heterojunctions.