Kinetics of Pd<sub>2</sub>Si layer growth measured by an X-ray diffraction technique.

COULMAN B; CHEN H

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J-GLOBAL ID：200902013274233920 Reference number：86A0489937

Kinetics of Pd₂Si layer growth measured by an X-ray diffraction technique.

X線回折法によるPd₂Si層成長の速度論の研究

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Author (2)： ,
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Volume： 59 Issue： 10 Page： 3467-3474 Publication year： May. 15, 1986
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Thin films of other inorganic compounds , 半導体-金属接触【’81~’92】

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Kinetics of Pd2Si layer growth measured by an X-ray diffraction technique.

Kinetics of Pd₂Si layer growth measured by an X-ray diffraction technique.