Art
J-GLOBAL ID：200902014053695046   Reference number：90A0348762

Electrical damage in n-GaAs due to methane-hydrogen RIE.

メタン-水素反応性イオンエッチングによるn-GaAsの電気的劣化
Author (2)：
COLLOT P

About COLLOT P

(Thomson CSF, Orsay, FRA)

About Thomson CSF, Orsay, FRA

, 
GAONACH C

About GAONACH C

(Thomson CSF, Orsay, FRA)

About Thomson CSF, Orsay, FRA


Material：
Semiconductor Science and Technology  (Semicond Sci Technol)

About Semiconductor Science and Technology


Volume： 5  Issue： 3  Page： 237-241  Publication year： Mar. 1990 
JST Material Number： E0503B  ISSN： 0268-1242  CODEN： SSTEET  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
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Hydrogen

About Hydrogen

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
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All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
methane

About methane


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JST classification (2)：
JST classification
Category name(code) classified by JST.
Applications of plasma 
(BJ02110K)

About Applications of plasma

,  Irradiational changes semiconductors 
(BK16123E)

About Irradiational changes semiconductors

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
メタン

About メタン

, 
水素

About 水素

, 
反応性イオンエッチング

About 反応性イオンエッチング

, 
GaAs

About GaAs


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