Art
J-GLOBAL ID：200902014532038750   Reference number：92A0573178

Morphology of AlGaAs layer grown on GaAs(111)A substrate plane by organometallic vapor phase epitaxy.

GaAs(111)A基板面上にOMVPE法によって成長させたAlGaAs層の形態
Author (5)：
UMEMURA M

About UMEMURA M

(Shizuoka Univ., Hamamatsu, JPN)

About Shizuoka Univ., Hamamatsu, JPN

, 
KUWAHARA K

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(Shizuoka Univ., Hamamatsu, JPN)

About Shizuoka Univ., Hamamatsu, JPN

, 
FUKE S

About FUKE S

(Shizuoka Univ., Hamamatsu, JPN)

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, 
SATO M

About SATO M

(Sanken Electric Co., Ltd., Saitama)

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, 
IMAI T

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(Meisei Univ., Hino, JPN)

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Material：
Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)

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Volume： 72  Issue： 1  Page： 313-315  Publication year： Jul. 01, 1992 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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gallium arsenide

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,...
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JST classification (1)：
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Semiconductor thin films 
(BK14040E)

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Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
GaAs

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, 
基板面

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, 
OMVPE

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, 
成長

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, 
AlGaAs

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, 
形態

About 形態


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