X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses of the initial growth mechanism of CdTe layers on (100) GaAs by metalorganic vapor phase epitaxy.

EKAWA M; YASUDA K; SONE S; SUGIURA Y; SAJI M; TANAKA A

Art

J-GLOBAL ID：200902016747882822 Reference number：90A0605569

X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses of the initial growth mechanism of CdTe layers on (100) GaAs by metalorganic vapor phase epitaxy.

有機金属気相エピタクシーによる(100)GaAs上のCdTe膜の初期成長機構のX線光電子分光法およびAuger電子分光法による分析

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Author (6)： , , , , ,
Material：
Volume： 67 Issue： 11 Page： 6865-6870 Publication year： Jun. 01, 1990
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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