Art

J-GLOBAL ID：200902021492638535   Reference number：90A0493940

High-temperature luminescence in 6H-SiC doped with Ga and N.

GaとNをドープした6H-SiCの高温ルミネセンス

Author (6)： IVANOV A I (A.F. Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, Leningrad) ,  MOKHOV E N (A.F. Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, Leningrad) ,  ODING V G (A.F. Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, Leningrad) ,  VAVILOV V S (A.F. Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, Leningrad) ,  VODAKOV YU A (A.F. Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, Leningrad) ,  CHUKICHEV M V (A.F. Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, Leningrad)
Material： Soviet Technical Physics Letters  (Pis'ma v Zhurnal Tekhnicheskoj Fiziki)
Volume： 15  Issue： 9  Page： 677-678  Publication year： Sep. 1989 
JST Material Number： H0665A  ISSN： 0360-120X  CODEN： STPLD2  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： silicon carbide ,...

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JST classification (1)： Luminescence of semiconductors  (BM08092S)

Terms in the title (4)： Ga ,  ドープ ,  6H-SiC ,  ルミネセンス