Art

J-GLOBAL ID：200902022984146090   Reference number：93A0755375

Effects of hydrogen or nitrogen on growth of oxygen-related defects in germanium.

Author (4)： MAKIHARA N (Matsue Coll. Technology, Matsue, JPN) ,  ITO K (Shimane Univ., Matsue, JPN) ,  MIZUNO K (Shimane Univ., Matsue, JPN) ,  ONO K (Shimane Univ., Matsue, JPN)
Material： Defect Engineering in Semiconductor Growth, Processing and Device Technology  (Defect Eng Semicond Growth Process Device Tech)
Page： 585-590  Publication year： 1992 
JST Material Number： K19930428  ISBN： 1-55899-157-3  Document type： Proceedings
Country of issue： United States (USA)  Language： ENGLISH (EN)