Art

J-GLOBAL ID：200902024028198092   Reference number：84A0480020

Growth and structure of layered amorphous semiconductors.

層状非晶質半導体の成長と構造

Author (7)： ABELES B (Exxon Research and Engineering Co., New Jersey) ,  TIEDJE T (Exxon Research and Engineering Co., New Jersey) ,  LIANG K S (Exxon Research and Engineering Co., New Jersey) ,  DECKMAN H W (Exxon Research and Engineering Co., New Jersey) ,  STASIEWSKI H C (Exxon Research and Engineering Co., New Jersey) ,  SCANLON J C (Exxon Research and Engineering Co., New Jersey) ,  EISENBERGER P M (Exxon Research and Engineering Co., New Jersey)
Material： Journal of Non-Crystalline Solids  (J Non-Cryst Solid)
Volume： 66  Issue： 1/2  Page： 351-356  Publication year： Jul. 1984 
JST Material Number： D0642A  ISSN： 0022-3093  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： amorphous semiconductor ,...

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JST classification (2)： Structure of amorphous semiconductors  (BK04030O) ,  Semiconductor thin films  (BK14040E)

Terms in the title (3)： 層状 ,  非晶質半導体 ,  成長