Art
J-GLOBAL ID：200902025626772034
Reference number：90A0851281
Device quality In0.4Ga0.6As grown on GaAs by molecular beam epitaxy.
分子線エピタクシーでGaAs上に成長した素子品質のIn0.4Ga0.6As
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Author (3)：
,
,
Material：
Volume：
57
Issue：
10
Page：
1040-1042
Publication year：
Sep. 03, 1990
JST Material Number：
H0613A
ISSN：
0003-6951
CODEN：
APPLAB
Document type：
Article
Article type：
短報
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
半導体-半導体接触【’81~’92】
, Semiconductor thin films
Terms in the title (3)：
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,
,
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