Art
J-GLOBAL ID：200902026974300150   Reference number：91A0310844

Porous silicon formation: A quantum wire effect.

多孔性シリコン形成:量子細線効果
Author (2)：
LEHMANN V

About LEHMANN V

(Duke Univ., North Carolina)

About Duke Univ., North Carolina

, 
GOESELE U

About GOESELE U

(Duke Univ., North Carolina)

About Duke Univ., North Carolina


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 58  Issue： 8  Page： 856-858  Publication year： Feb. 25, 1991 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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silicon

About silicon

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
半導体-半導体接触【’81~’92】 
(BM03072N)

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,  Electrode process 
(CB07040U)

About Electrode process

Terms in the title (2)：
Terms in the title
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多孔性シリコン

About 多孔性シリコン

, 
量子細線

About 量子細線


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