Electron-transport parameters and tail-state distribution in hydrogenated amorphous silicon obtained from position and tail-state matrix simulation of drift experiments.

VANDERHAGHEN R

Art

J-GLOBAL ID：200902031961611703 Reference number：89A0142329

Electron-transport parameters and tail-state distribution in hydrogenated amorphous silicon obtained from position and tail-state matrix simulation of drift experiments.

水素化非晶質シリコンにおけるドリフト実験の位置およびテイル状態行列シミュレーションから得た電子輸送パラメータとテイル状態分布

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Material：
Volume： 38 Issue： 15 Page： 10755-10775 Publication year： Nov. 15, 1988
JST Material Number： D0746A ISSN： 1098-0121 CODEN： PRBMDO Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Electric conduction in amorphous and liquid semiconductors , Electronic structure of amorphous materials in general

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