Art
J-GLOBAL ID：200902032956322147   Reference number：86A0321394

Electrical characteristics and testing considerations for gate oxide shorts in CMOS ICs.

CMOS ICのゲート酸化膜の短絡現象の電気的特性と試験留意点
Author (2)：
HAWKINS C F

About HAWKINS C F

(Univ. New Mexico)

About Univ. New Mexico

, 
SODEN J M

About SODEN J M

(Sandia National Lab., NM)

About Sandia National Lab., NM


Material：
Proceedings. International Test Conference  (Proc Int Test Conf)

About Proceedings. International Test Conference


Volume： 1985  Page： 544-555  Publication year： 1985 
JST Material Number： E0211B  ISSN： 1089-3539  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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All keywords is available on JDreamIII(charged).
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MOS integrated circuit

About MOS integrated circuit

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Measurement,testing and reliability of solid-state devices 
(NC03040G)

About Measurement,testing and reliability of solid-state devices

,  General 
(NC03161C)

About General

Terms in the title (7)：
Terms in the title
Keywords automatically extracted from the title.
CMOS

About CMOS

, 
IC

About IC

, 
ゲート酸化膜

About ゲート酸化膜

, 
短絡現象

About 短絡現象

, 
電気的特性

About 電気的特性

, 
試験

About 試験

, 
留意

About 留意


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