The oligothiophene-based field-effect transistor: How it works and how to improve it.

HOROWITZ G; PENG X; FICHOU D; GARNIER F

Art

J-GLOBAL ID：200902033997205836 Reference number：90A0238659

The oligothiophene-based field-effect transistor: How it works and how to improve it.

オリゴチオフェンを基礎にしたFET 動作の仕方と改良法

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Volume： 67 Issue： 1 Page： 528-532 Publication year： Jan. 01, 1990
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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金属-絶縁体-半導体構造【’81~’92】 , Transistors

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