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J-GLOBAL ID：200902038872639135   Reference number：87A0472679

LPE growth of GaInAsP/InP DH.

GaInAsP/InP二重ヘテロ構造の液相エピタクシー成長

Author (5)： NOHAVICA D (Inst. Radio Engineering and Electronics, Czechoslovak Academy of Sciences, Prague, CSK) ,  TEMINOVA J (Inst. Radio Engineering and Electronics, Czechoslovak Academy of Sciences, Prague, CSK) ,  TUAN D A (Inst. Physics, Hanoi, VNM) ,  KORTAN J (Inst. Radio Engineering and Electronics, Czechoslovak Academy of Sciences, Prague, CSK) ,  ZELINKA J (Inst. Radio Engineering and Electronics, Czechoslovak Academy of Sciences, Prague, CSK)
Material： Crystal Properties and Preparation  (Cryst Prop Prep)
Volume： 12  Page： 45-50  Publication year： 1987 
JST Material Number： D0745B  ISSN： 0252-1067  Document type： Article
Article type： 原著論文  Country of issue： Switzerland (CHE)  Language： ENGLISH (EN)

Thesaurus term： gallium indium arsenide phosphide ,...

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JST classification (3)： 半導体-半導体接触【’81~’92】  (BM03072N) ,  Semiconductor thin films  (BK14040E) ,  Semiconductor lasers  (BD04070L)

Terms in the title (5)： GaInAsP ,  InP ,  ヘテロ構造 ,  液相エピタクシー ,  成長