Art
J-GLOBAL ID：200902040092067320   Reference number：85A0513661

Oxidation-enhanced diffusion of ion-implanted boron in heavily phosphorus-doped silicon.

りんを高度にドープしたシリコンにイオン注入したほう素の酸化促進拡散
Author (1)：
MIYAKE M

About MIYAKE M

(Atsugi Electrical Communication Lab.)

About Atsugi Electrical Communication Lab.


Material：
Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)

About Journal of Applied Physics


Volume： 58  Issue： 2  Page： 711-715  Publication year： Jul. 15, 1985 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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Keywords indexed to the article.
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silicon

About silicon

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Irradiational changes semiconductors 
(BK16123E)

About Irradiational changes semiconductors

,  Diffusion in solids in general 
(BL06021L)

About Diffusion in solids in general

Terms in the title (7)：
Terms in the title
Keywords automatically extracted from the title.
りん

About りん

, 
ドープ

About ドープ

, 
シリコン

About シリコン

, 
イオン注入

About イオン注入

, 
ほう素

About ほう素

, 
酸化

About 酸化

, 
促進拡散

About 促進拡散


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