Residual strain analysis of In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs heteroepitaxial layers.

KRISHNAMOORTHY V; LIN Y W; CALHOUN L; LIU H L; PARK R M

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J-GLOBAL ID：200902041271626851 Reference number：93A0115018

Residual strain analysis of In_xGa_1-xAs/GaAs heteroepitaxial layers.

In_xGa_1-xAs/GaAsヘテロエピタキシャル層の残留歪の解析

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Author (5)： , , , ,
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Volume： 61 Issue： 22 Page： 2680-2682 Publication year： Nov. 30, 1992
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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Residual strain analysis of InxGa1-xAs/GaAs heteroepitaxial layers.

Residual strain analysis of In_xGa_1-xAs/GaAs heteroepitaxial layers.