Rapid-phase transitions of GeTe-Sb<sub>2</sub>Te<sub>3</sub> pseudobinary amorphous thin films for an optical disk memory.

YAMADA N; OHNO E; NISHIUCHI K; AKAHIRA N; TAKAO M

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J-GLOBAL ID：200902044904490562 Reference number：91A0352590

Rapid-phase transitions of GeTe-Sb₂Te₃ pseudobinary amorphous thin films for an optical disk memory.

光ディスクメモリ用のGeTe-Sb₂Te₃凝二元系非晶質薄膜の急速相転移

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Volume： 69 Issue： 5 Page： 2849-2856 Publication year： Mar. 01, 1991
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Laser irradiation effects and damages , Solid phase transitions , Electronic recording,magnetic recording,optical recording

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Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory.

Rapid-phase transitions of GeTe-Sb₂Te₃ pseudobinary amorphous thin films for an optical disk memory.