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J-GLOBAL ID:200902046097481905   Reference number:85A0168555

Mechanism of dry etching of silicon dioxide. A case of direct reactive ion etching.

二酸化けい素のドライエッチング機構 直接反応性イオンエッチングの場合
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Volume: 132  Issue:Page: 180-186  Publication year: Jan. 1985 
JST Material Number: C0285A  ISSN: 1945-7111  CODEN: JESOAN  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Applications of plasma  ,  Manufacturing technology of solid-state devices 
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