Mechanism of arsenic incorporation in MOVPE growth of CdTe layers.

EKAWA M; YASUDA K; OKADA M; FERID T; TANAKA A; SAJI M

Art

J-GLOBAL ID：200902049547775830 Reference number：92A0316843

Mechanism of arsenic incorporation in MOVPE growth of CdTe layers.

CdTe層のMOVPE成長におけるヒ素取込みの機構

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Author (6)： , , , , ,
Material：
Volume： 117 Issue： 1/4 Page： 254-258 Publication year： Feb. 1992
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Semiconductor thin films , Materials of solid-state devices

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