Evidence for the existence of an ordered state in Ga<sub>0.5</sub> In<sub>0.5</sub> P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy.

GOMYO A; SUZUKI T; KOBAYASHI K; KAWATA S; HINO I; YUASA T

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J-GLOBAL ID：200902051277223550 Reference number：87A0253320

Evidence for the existence of an ordered state in Ga_0.5 In_0.5 P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy.

金属有機気相エピタクシーで成長したGa_0.5In_0.5Pにおける秩序状態の存在の証拠およびそのバンドギャップエネルギーとの関係

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Author (6)： , , , , ,
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Volume： 50 Issue： 11 Page： 673-675 Publication year： Mar. 16, 1987
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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半導体-半導体接触【’81~’92】 , Electronic structure of crystalline semiconductors

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Evidence for the existence of an ordered state in Ga0.5 In0.5 P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy.

Evidence for the existence of an ordered state in Ga_0.5 In_0.5 P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy.