Gas-surce MBE growth of n-type InP using Si<sub>2</sub>H<sub>6</sub> as a gaseous dopant source.

ANDO HIDEYASU; OKAMOTO NAOYA; SANDHU A; FUJII TOSHIO

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J-GLOBAL ID：200902051496810410 Reference number：91A0572376

Gas-surce MBE growth of n-type InP using Si₂H₆ as a gaseous dopant source.

Si₂H₆をドーパントとして用いたn型InPのガスソースMBE成長

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Volume： 38th Issue： Pt 1 Page： 300 Publication year： Mar. 1991
JST Material Number： Y0054A Document type： Proceedings
Country of issue： Japan (JPN) Language： JAPANESE (JA)

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Gas-surce MBE growth of n-type InP using Si2H6 as a gaseous dopant source.

Gas-surce MBE growth of n-type InP using Si₂H₆ as a gaseous dopant source.