Measurement of Si-SiO<sub>2</sub> Interface States in the Si Conduction Band by Tunneling Current.

SAKASHITA MITSUO; ZAIMA SHIZUAKI; KOIDE YASUO; YASUDA YUKIO

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J-GLOBAL ID：200902053041826930 Reference number：91A0563385

Measurement of Si-SiO₂ Interface States in the Si Conduction Band by Tunneling Current.

トンネル電流によるSi伝導帯内のSi-SiO₂界面準位の測定

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Author (4)： , , ,
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Volume： 38th Issue： Pt 2 Page： 623 Publication year： Mar. 1991
JST Material Number： Y0054A Document type： Proceedings
Country of issue： Japan (JPN) Language： JAPANESE (JA)

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Measurement of Si-SiO2 Interface States in the Si Conduction Band by Tunneling Current.

Measurement of Si-SiO₂ Interface States in the Si Conduction Band by Tunneling Current.