Art
J-GLOBAL ID：200902053723597437
Reference number：90A0684071
Carrier dynamics of electrons and holes in moderately doped silicon.
適度にドープされたSiにおける電子と正孔のキャリア・ダイナミックス
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Author (2)：
,
Material：
Volume：
41
Issue：
17
Page：
12140-12149
Publication year：
Jun. 15, 1990
JST Material Number：
D0746A
ISSN：
1098-0121
CODEN：
PRBMDO
Document type：
Article
Article type：
原著論文
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Electric conduction in crystalline semiconductors
Terms in the title (6)：
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