Thermal growth of SiO<sub>2</sub>-Si interfaces on a Si(111)7×7 surface modified by cesium.

STARNBERG H I; SOUKIASSIAN P; BAKSHI M H; HURYCH Z

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J-GLOBAL ID：200902055053795456 Reference number：88A0303914

Thermal growth of SiO₂-Si interfaces on a Si(111)7×7 surface modified by cesium.

セシウムによって修飾されたSi(111)7×7表面上のSiO₂-Si界面の熱成長

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Volume： 37 Issue： 3 Page： 1315-1319 Publication year： Jan. 15, 1988
JST Material Number： D0746A ISSN： 1098-0121 CODEN： PRBMDO Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Surface structure of semiconductors , Electron spectroscopy

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Thermal growth of SiO2-Si interfaces on a Si(111)7×7 surface modified by cesium.

Thermal growth of SiO₂-Si interfaces on a Si(111)7×7 surface modified by cesium.