Art
J-GLOBAL ID：200902055610043187   Reference number：85A0142033

Buried Giga-ohm Resistor static memory cell process.

埋め込み高抵抗形スタティックメモリセルプロセス
Author (7)：
YAMANAKA TOSHIAKI

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(日立中研)

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, 
SAKAI YOSHIO

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(日立中研)

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, 
YAMAMOTO SHUICHI

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(日立中研)

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, 
NAGAI RYO

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(日立武蔵工場)

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, 
KURE TOKUO

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(日立中研)

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, 
MINATO OSAMU

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(日立中研)

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, 
HAYASHIDA TETSUYA

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(日立中研)

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Material：
電子通信学会技術研究報告

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Volume： 84  Issue： 241  Page： 35-41(SSD84-102)  Publication year： Dec. 18, 1984 
JST Material Number： S0532B  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
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integrated circuit memory

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,...
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random access memory

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Memory units 
(JC04060F)

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埋め込み

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