Art
J-GLOBAL ID：200902056334237335   Reference number：86A0094925

Highly accumulated electron layer at a semiconductor/electrolyte interface.

半導体/電解質界面における高密度電子蓄積層
Author (2)：
TARDELLA A

About TARDELLA A

(Ecole Polytechnique Palaiseau, France)

About Ecole Polytechnique Palaiseau, France

, 
CHAZALVIEL J-N

About CHAZALVIEL J-N

(Ecole Polytechnique Palaiseau, France)

About Ecole Polytechnique Palaiseau, France


Material：
Physical Review. B. Condensed Matter and Materials Physics  (Physical Review. B. Condensed Matter)

About Physical Review. B. Condensed Matter and Materials Physics


Volume： 32  Issue： 4  Page： 2439-2448  Publication year： Aug. 15, 1985 
JST Material Number： D0746A  ISSN： 1098-0121  CODEN： PRBMDO  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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MOS structure

About MOS structure

,...
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Thesaurus term/Semi thesaurus term
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半導体電解質接合

About 半導体電解質接合

,...
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JST classification
Category name(code) classified by JST.
金属-絶縁体-半導体構造【’81~’92】 
(BM03074V)

About 金属-絶縁体-半導体構造【’81~’92】

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
電解質

About 電解質

, 
界面

About 界面

, 
電子

About 電子

, 
蓄積層

About 蓄積層


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